Dual Resonance Circuits by Defected Ground Structure Resonators for Low Phase Noise K-Band CMOS VCO

Ramesh K. Pokharel, Nusrat Jahan, Adel Barakat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We analyze the quality factor (Q_U/Q_K) of three different types of defected ground structure (DGS) resonators including a series resonance in addition to the parallel one. Then, we implement the resonators to design high-performance K-band VCOs in 0.18μ CMOS Technology and finally, a low phase noise VCO at K-band is introduced.

Original languageEnglish
Title of host publication2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538659717
DOIs
Publication statusPublished - Nov 5 2018
Event2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018 - Melbourne, Australia
Duration: Aug 15 2018Aug 17 2018

Publication series

Name2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018

Other

Other2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018
CountryAustralia
CityMelbourne
Period8/15/188/17/18

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Pokharel, R. K., Jahan, N., & Barakat, A. (2018). Dual Resonance Circuits by Defected Ground Structure Resonators for Low Phase Noise K-Band CMOS VCO. In 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018 [8524088] (2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2018.8524088