Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications

Hiroshi Kawarada, Tetsuya Yamada, Dechen Xu, Hidetoshi Tsuboi, Yuya Kitabayashi, Daisuke Matsumura, Masanobu Shibata, Takuya Kudo, Masafumi Inaba, Atsushi Hiraiwa

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Abstract

Complementary power field effect transistors (FETs) based on wide bandgap materials not only provide high-voltage switching capability with the reduction of on-resistance and switching losses, but also enable a smart inverter system by the dramatic simplification of external circuits. However, p-channel power FETs with equivalent performance to those of n-channel FETs are not obtained in any wide bandgap material other than diamond. Here we show that a breakdown voltage of more than 1600 V has been obtained in a diamond metal-oxide-semiconductor (MOS) FET with a p-channel based on a two-dimensional hole gas (2DHG). Atomic layer deposited (ALD) Al 2 O 3 induces the 2DHG ubiquitously on a hydrogen-terminated (C-H) diamond surface and also acts as both gate insulator and passivation layer. The high voltage performance is equivalent to that of state-of-the-art SiC planar n-channel FETs and AlGaN/GaN FETs. The drain current density in the on-state is also comparable to that of these two FETs with similar device size and V B.

Original languageEnglish
Article number42368
JournalScientific reports
Volume7
DOIs
Publication statusPublished - Feb 20 2017

All Science Journal Classification (ASJC) codes

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    Kawarada, H., Yamada, T., Xu, D., Tsuboi, H., Kitabayashi, Y., Matsumura, D., Shibata, M., Kudo, T., Inaba, M., & Hiraiwa, A. (2017). Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications. Scientific reports, 7, [42368]. https://doi.org/10.1038/srep42368