Dynamic analysis of rapid-melting growth using SiGe on insulator

Ryo Matsumura, Yuki Tojo, Masashi Kurosawa, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

Abstract

Dynamics in rapid-melting growth are analyzed by using Si-segregation phenomena in SiGe-on-insulator (SGOI). To clarify growth-stream and growth-velocity, SiGe profiles in SGOI network and stripe structures are investigated. Based on 2-dimensional Si-concentration mapping for SGOI network, visualization of routes of growth fronts becomes possible. In addition, analysis of Si concentration profiles in SGOI stripes enables evaluation of growth velocity. It is clarified that growth velocity increases by 15 times with increasing growth distance for SGOI stripe with 500 μm length. These techniques are useful to understand detailed kinetics in rapid-melting growth.

Original languageEnglish
Pages (from-to)125-128
Number of pages4
JournalThin Solid Films
Volume557
DOIs
Publication statusPublished - Apr 30 2014

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Dynamic analysis
Melting
melting
insulators
Visualization
velocity distribution
routes
Kinetics
evaluation
kinetics
profiles

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Dynamic analysis of rapid-melting growth using SiGe on insulator. / Matsumura, Ryo; Tojo, Yuki; Kurosawa, Masashi; Sadoh, Taizoh; Miyao, Masanobu.

In: Thin Solid Films, Vol. 557, 30.04.2014, p. 125-128.

Research output: Contribution to journalArticle

Matsumura, Ryo ; Tojo, Yuki ; Kurosawa, Masashi ; Sadoh, Taizoh ; Miyao, Masanobu. / Dynamic analysis of rapid-melting growth using SiGe on insulator. In: Thin Solid Films. 2014 ; Vol. 557. pp. 125-128.
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