Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation

Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin Ichi Nishizawa, Wataru Saito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Dynamic Avalanche (DA) phenomenon poses a fundamental limit on the operating current density, turn-off power loss as well as reliability of MOS-bipolar devices. Overcoming this phenomenon is essential to ensure their safe operation in emerging electric transport. In this work, detailed analysis of 1.2 kV trench gated IGBTs are undertaken through experiments and calibrated TCAD simulations to show the fundamental cause of the DA as well as a method to achieve DA free design for ultra-high current density operation and reliability in 1.2 kV Si-IGBTs.

Original languageEnglish
Title of host publication2019 IEEE International Electron Devices Meeting, IEDM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728140315
DOIs
Publication statusPublished - Dec 2019
Event65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
Duration: Dec 7 2019Dec 11 2019

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2019-December
ISSN (Print)0163-1918

Conference

Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
CountryUnited States
CitySan Francisco
Period12/7/1912/11/19

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Luo, P., Ekkanath Madathil, S. N., Nishizawa, S. I., & Saito, W. (2019). Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation. In 2019 IEEE International Electron Devices Meeting, IEDM 2019 [8993596] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993596