Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density Operation

Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin Ichi Nishizawa, Wataru Saito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Dynamic Avalanche (DA) effects in the Super-Junction Trench IGBTs are analyzed through 3-D TCAD simulations for the first time. A DA free solution for high power density and low loss is proposed and demonstrated in detail. Furthermore, simulation results show that DA results in significant increase in turn-off losses in the Super-Junction Trench IGBTs at high current density operations, which poses a fundamental limit on the power density of IGBT applications. In contrast, the Super-Junction Trench Clustered IGBTs remain DA free at high current density and show low switching losses due to enhanced PMOS action. Therefore, the Super-Junction Trench IGBTs are well suitable for high power density operations with a potential to operate beyond the 1-D unipolar 4H-SiC limit.

Original languageEnglish
Title of host publicationProceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages470-473
Number of pages4
ISBN (Electronic)9781728148366
DOIs
Publication statusPublished - Sep 2020
Event32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 - Virtual, Online, Austria
Duration: Sep 13 2020Sep 18 2020

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2020-September
ISSN (Print)1063-6854

Conference

Conference32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020
CountryAustria
CityVirtual, Online
Period9/13/209/18/20

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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