Abstract
Dynamic changes in distribution of mechanical strain generated during wire bonding in Si under and near the bonding pad were measured by using a piezoresistive linear array sensor. The sensor was designed to be able to determine strains in the directions normal and parallel to the surface. Bonding dynamics of Cu and Au balls were investigated. We can clearly observe the oscillating strain according to the application of 150 kHz ultrasonic vibration. It was also clearly observed that the position of the largest compressive strain moved from the center of the ball to the periphery according to the progress of bonding under the application of the ultrasonic vibration. Bonding of Cu was found to generate larger strain than bonding of Au. A large oscillating tensile strain generated at the periphery of Cu ball when ultrasonic amplitude is increased is found to cause fracture of Si. The largest residual strain is observed for Cu bonding at the location where the end of capillary tool was present during bonding.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - IEEE 67th Electronic Components and Technology Conference, ECTC 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1786-1792 |
| Number of pages | 7 |
| ISBN (Electronic) | 9781509043323 |
| DOIs | |
| Publication status | Published - Aug 1 2017 |
| Event | 67th IEEE Electronic Components and Technology Conference, ECTC 2017 - Lake Buena Vista, United States Duration: May 30 2017 → Jun 2 2017 |
Publication series
| Name | Proceedings - Electronic Components and Technology Conference |
|---|---|
| ISSN (Print) | 0569-5503 |
Other
| Other | 67th IEEE Electronic Components and Technology Conference, ECTC 2017 |
|---|---|
| Country | United States |
| City | Lake Buena Vista |
| Period | 5/30/17 → 6/2/17 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Dynamic Strain of Ultrasonic Cu and Au Ball Bonding Measured In-Situ by Using Silicon Piezoresistive Sensor. / Iwanabe, Keiichiro; Nakadozono, Kenichi; Sakamoto, Mamoru; Asano, Tanemasa.
Proceedings - IEEE 67th Electronic Components and Technology Conference, ECTC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1786-1792 7999923 (Proceedings - Electronic Components and Technology Conference).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Dynamic Strain of Ultrasonic Cu and Au Ball Bonding Measured In-Situ by Using Silicon Piezoresistive Sensor
AU - Iwanabe, Keiichiro
AU - Nakadozono, Kenichi
AU - Sakamoto, Mamoru
AU - Asano, Tanemasa
PY - 2017/8/1
Y1 - 2017/8/1
N2 - Dynamic changes in distribution of mechanical strain generated during wire bonding in Si under and near the bonding pad were measured by using a piezoresistive linear array sensor. The sensor was designed to be able to determine strains in the directions normal and parallel to the surface. Bonding dynamics of Cu and Au balls were investigated. We can clearly observe the oscillating strain according to the application of 150 kHz ultrasonic vibration. It was also clearly observed that the position of the largest compressive strain moved from the center of the ball to the periphery according to the progress of bonding under the application of the ultrasonic vibration. Bonding of Cu was found to generate larger strain than bonding of Au. A large oscillating tensile strain generated at the periphery of Cu ball when ultrasonic amplitude is increased is found to cause fracture of Si. The largest residual strain is observed for Cu bonding at the location where the end of capillary tool was present during bonding.
AB - Dynamic changes in distribution of mechanical strain generated during wire bonding in Si under and near the bonding pad were measured by using a piezoresistive linear array sensor. The sensor was designed to be able to determine strains in the directions normal and parallel to the surface. Bonding dynamics of Cu and Au balls were investigated. We can clearly observe the oscillating strain according to the application of 150 kHz ultrasonic vibration. It was also clearly observed that the position of the largest compressive strain moved from the center of the ball to the periphery according to the progress of bonding under the application of the ultrasonic vibration. Bonding of Cu was found to generate larger strain than bonding of Au. A large oscillating tensile strain generated at the periphery of Cu ball when ultrasonic amplitude is increased is found to cause fracture of Si. The largest residual strain is observed for Cu bonding at the location where the end of capillary tool was present during bonding.
UR - http://www.scopus.com/inward/record.url?scp=85028053514&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85028053514&partnerID=8YFLogxK
U2 - 10.1109/ECTC.2017.316
DO - 10.1109/ECTC.2017.316
M3 - Conference contribution
AN - SCOPUS:85028053514
T3 - Proceedings - Electronic Components and Technology Conference
SP - 1786
EP - 1792
BT - Proceedings - IEEE 67th Electronic Components and Technology Conference, ECTC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
ER -