Dynamical diffraction effect on HOLZ-pattern geometry in Si-Ge alloys and determination of local lattice parameter

Y. Tomokiyo, S. Matsumura, T. Okuyama, T. Yasunaga, N. Kuwano, K. Oki

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Higher-order Laue zone (HOLZ) patterns are observed in convergent-beam electron diffraction (CBED) patterns of Si-Ge alloys and the dynamical effect on HOLZ lines is discussed in relation to the kinematical approximation to simulate the HOLZ lines. Double lines often appear from one HOLZ reflection due to the excitation of the first and second branches of the zeroth-layer dispersion surface. The magnitude of the systematic line shift from the line positions predicted by the kinematical simulation changes sensitively with specimen thickness and alloy composition depending on which branch is dominantly excited. The kinematical simulation is applicable to accurate determination of lattice parameters with a proper correction δE: a difference between the effective electron energy and the actual microscope operating voltage. Usefulness of the kinematical simulation is demonstrated in the investigation of the segregation in a Si-Ge alloy.

Original languageEnglish
Pages (from-to)276-285
Number of pages10
JournalUltramicroscopy
Volume54
Issue number2-4
DOIs
Publication statusPublished - Jun 1994

Fingerprint

Lattice constants
lattice parameters
Diffraction
Geometry
geometry
diffraction
Electron diffraction
Diffraction patterns
Microscopes
simulation
Electrons
Electric potential
diffraction patterns
electron diffraction
Chemical analysis
microscopes
electron energy
shift
electric potential
approximation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

Cite this

Dynamical diffraction effect on HOLZ-pattern geometry in Si-Ge alloys and determination of local lattice parameter. / Tomokiyo, Y.; Matsumura, S.; Okuyama, T.; Yasunaga, T.; Kuwano, N.; Oki, K.

In: Ultramicroscopy, Vol. 54, No. 2-4, 06.1994, p. 276-285.

Research output: Contribution to journalArticle

Tomokiyo, Y. ; Matsumura, S. ; Okuyama, T. ; Yasunaga, T. ; Kuwano, N. ; Oki, K. / Dynamical diffraction effect on HOLZ-pattern geometry in Si-Ge alloys and determination of local lattice parameter. In: Ultramicroscopy. 1994 ; Vol. 54, No. 2-4. pp. 276-285.
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AB - Higher-order Laue zone (HOLZ) patterns are observed in convergent-beam electron diffraction (CBED) patterns of Si-Ge alloys and the dynamical effect on HOLZ lines is discussed in relation to the kinematical approximation to simulate the HOLZ lines. Double lines often appear from one HOLZ reflection due to the excitation of the first and second branches of the zeroth-layer dispersion surface. The magnitude of the systematic line shift from the line positions predicted by the kinematical simulation changes sensitively with specimen thickness and alloy composition depending on which branch is dominantly excited. The kinematical simulation is applicable to accurate determination of lattice parameters with a proper correction δE: a difference between the effective electron energy and the actual microscope operating voltage. Usefulness of the kinematical simulation is demonstrated in the investigation of the segregation in a Si-Ge alloy.

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