### Abstract

We studied the dynamical diffraction effects on the defect lines of higher-order Laue zone reflections (HOLZ lines) in bright field disks of convergent-beam electron diffraction (CBED). The positions of the HOLZ lines were confirmed experimentally to deviate by a small amount from the positions expected from the kinematical approximation. The amount of line shift is represented by the corresponding deviation of the accelerating voltage Δ E. In the case of [111] incidence, one HOLZ reflection can generate two lines with negative and positive values of Δ E. Calculations based on the dynamical diffraction theory clarified that the HOLZ lines with negative and positive Δ E arise from the first and second branches of the zeroth-layer dispersion surface, respectively. Either, or occasionally both, of the lines is observed in the HOLZ pattern, depending upon which branch is dominantly excited. The dependency of Δ E on the material species and thickness of specimen and on the zone axis is discussed in detail for Si, Ge and some III-V compound semiconductors.

Original language | English |
---|---|

Pages (from-to) | 309-317 |

Number of pages | 9 |

Journal | Ultramicroscopy |

Volume | 31 |

Issue number | 3 |

DOIs | |

Publication status | Published - Jan 1 1989 |

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### All Science Journal Classification (ASJC) codes

- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Instrumentation

### Cite this

*Ultramicroscopy*,

*31*(3), 309-317. https://doi.org/10.1016/0304-3991(89)90053-3

**Dynamical diffraction effects on higher-order laue zone lines in CBED patterns of semiconductors.** / Okuyama, T.; Matsumura, Syo; Kuwano, N.; Oki, K.; Tomokiyo, Y.

Research output: Contribution to journal › Article

*Ultramicroscopy*, vol. 31, no. 3, pp. 309-317. https://doi.org/10.1016/0304-3991(89)90053-3

}

TY - JOUR

T1 - Dynamical diffraction effects on higher-order laue zone lines in CBED patterns of semiconductors

AU - Okuyama, T.

AU - Matsumura, Syo

AU - Kuwano, N.

AU - Oki, K.

AU - Tomokiyo, Y.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - We studied the dynamical diffraction effects on the defect lines of higher-order Laue zone reflections (HOLZ lines) in bright field disks of convergent-beam electron diffraction (CBED). The positions of the HOLZ lines were confirmed experimentally to deviate by a small amount from the positions expected from the kinematical approximation. The amount of line shift is represented by the corresponding deviation of the accelerating voltage Δ E. In the case of [111] incidence, one HOLZ reflection can generate two lines with negative and positive values of Δ E. Calculations based on the dynamical diffraction theory clarified that the HOLZ lines with negative and positive Δ E arise from the first and second branches of the zeroth-layer dispersion surface, respectively. Either, or occasionally both, of the lines is observed in the HOLZ pattern, depending upon which branch is dominantly excited. The dependency of Δ E on the material species and thickness of specimen and on the zone axis is discussed in detail for Si, Ge and some III-V compound semiconductors.

AB - We studied the dynamical diffraction effects on the defect lines of higher-order Laue zone reflections (HOLZ lines) in bright field disks of convergent-beam electron diffraction (CBED). The positions of the HOLZ lines were confirmed experimentally to deviate by a small amount from the positions expected from the kinematical approximation. The amount of line shift is represented by the corresponding deviation of the accelerating voltage Δ E. In the case of [111] incidence, one HOLZ reflection can generate two lines with negative and positive values of Δ E. Calculations based on the dynamical diffraction theory clarified that the HOLZ lines with negative and positive Δ E arise from the first and second branches of the zeroth-layer dispersion surface, respectively. Either, or occasionally both, of the lines is observed in the HOLZ pattern, depending upon which branch is dominantly excited. The dependency of Δ E on the material species and thickness of specimen and on the zone axis is discussed in detail for Si, Ge and some III-V compound semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=0024761897&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024761897&partnerID=8YFLogxK

U2 - 10.1016/0304-3991(89)90053-3

DO - 10.1016/0304-3991(89)90053-3

M3 - Article

AN - SCOPUS:0024761897

VL - 31

SP - 309

EP - 317

JO - Ultramicroscopy

JF - Ultramicroscopy

SN - 0304-3991

IS - 3

ER -