Dynamical Monte Carlo simulation of L11(CuPt)-type ordering during (001) epitaxial growth of III-V semiconductor alloys

Syo Matsumura, K. Takano, N. Kuwano, K. Oki

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

In this study, we have carried out Monte Carlo simulation of L11(CuPt)-type ordering in II-V semiconductor alloys of A0.5B0.5C during the (001) epitaxial growth, on the basis of an Ising-like model for the layer-by-layer stacking including surface migration of atoms. Fourier power spectra of the atom configurations thus obtained exhibit diffuse streaks running along the growth direction through peaks at 1 2 1 2 1 2 positions indicative of the L11-type ordering. An additional tendency for first nearest neighboring atoms toward clustering gives rise to wavy modulation of the streaks such as observed in electron diffraction patterns of epitaxial layers of Ga0.5In0.5P or GaAs0.5Sb0.5. The result suggests that the epitaxial growth develops L11 ordered domains with numerous stacking faults and small like-atom clusters simultaneously within the epilayers.

Original languageEnglish
Pages (from-to)194-198
Number of pages5
JournalJournal of Crystal Growth
Volume115
Issue number1-4
DOIs
Publication statusPublished - Dec 2 1991

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Epitaxial growth
Atoms
atoms
simulation
Epilayers
Epitaxial layers
Stacking faults
Power spectrum
Electron diffraction
crystal defects
Diffraction patterns
Ising model
power spectra
tendencies
diffraction patterns
electron diffraction
Modulation
Semiconductor materials
modulation
Monte Carlo simulation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Dynamical Monte Carlo simulation of L11(CuPt)-type ordering during (001) epitaxial growth of III-V semiconductor alloys. / Matsumura, Syo; Takano, K.; Kuwano, N.; Oki, K.

In: Journal of Crystal Growth, Vol. 115, No. 1-4, 02.12.1991, p. 194-198.

Research output: Contribution to journalArticle

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