Dynamical motion of a guest ion studied by Raman scattering and the lattice thermal conductivity in A8Ga16Si30-xGe x (A = Ba, Sr)

Y. Takasu, T. Hasegawa, N. Ogita, M. Udagawa, Koichiro Suekuni, M. A. Avila, T. Takabatake

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Dynamical motions of a guest ion in type-I clathrate compounds have been investigated using Raman scattering. It has been found that the 4th order anharmonic potential is important for the guest ion motion not only for A 8Ga16Ge30 (A=Ba, Sr, Eu), but also for A 8Ga16Si30-xGex (A = Ba, Sr). The substitution of Ge expands isotropically the cage at 6d-site for Ba 8Ga16Si30-xGex, however, anisotropically for Sr8Ga16Si30-xGe x. Especially, for Sr8Ga16Si 30-xGex, the off-center rattling develops with increasing Ge concentration and plays an important role to the suppression of the lattice thermal conductivity.

Original languageEnglish
Title of host publicationProceedings ICT'07 - 26th International Conference on Thermoelectrics
Pages223-225
Number of pages3
DOIs
Publication statusPublished - Dec 1 2007
Externally publishedYes
EventICT'07 - 26th International Conference on Thermoelectrics - Jeju, Korea, Republic of
Duration: Jun 3 2007Jun 7 2007

Publication series

NameInternational Conference on Thermoelectrics, ICT, Proceedings

Other

OtherICT'07 - 26th International Conference on Thermoelectrics
CountryKorea, Republic of
CityJeju
Period6/3/076/7/07

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Takasu, Y., Hasegawa, T., Ogita, N., Udagawa, M., Suekuni, K., Avila, M. A., & Takabatake, T. (2007). Dynamical motion of a guest ion studied by Raman scattering and the lattice thermal conductivity in A8Ga16Si30-xGe x (A = Ba, Sr). In Proceedings ICT'07 - 26th International Conference on Thermoelectrics (pp. 223-225). [4569464] (International Conference on Thermoelectrics, ICT, Proceedings). https://doi.org/10.1109/ICT.2007.4569464