Dynamical motion of a guest ion studied by Raman scattering and the lattice thermal conductivity in A8Ga16Si30-xGe x (A = Ba, Sr)

Y. Takasu; T. Hasegawa; N. Ogita; M. Udagawa; K. Suekuni; M. A. Avila; T. Takabatake

doi:10.1109/ICT.2007.4569464

Dynamical motion of a guest ion studied by Raman scattering and the lattice thermal conductivity in A₈Ga₁₆Si_30-xGe _x (A = Ba, Sr)

Y. Takasu, T. Hasegawa, N. Ogita, M. Udagawa, K. Suekuni, M. A. Avila, T. Takabatake

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Dynamical motions of a guest ion in type-I clathrate compounds have been investigated using Raman scattering. It has been found that the 4th order anharmonic potential is important for the guest ion motion not only for A ₈Ga₁₆Ge₃₀ (A=Ba, Sr, Eu), but also for A ₈Ga₁₆Si_30-xGe_x (A = Ba, Sr). The substitution of Ge expands isotropically the cage at 6d-site for Ba ₈Ga₁₆Si_30-xGe_x, however, anisotropically for Sr₈Ga₁₆Si_30-xGe _x. Especially, for Sr₈Ga₁₆Si _30-xGe_x, the off-center rattling develops with increasing Ge concentration and plays an important role to the suppression of the lattice thermal conductivity.

Original language	English
Title of host publication	Proceedings ICT'07 - 26th International Conference on Thermoelectrics
Pages	223-225
Number of pages	3
DOIs	https://doi.org/10.1109/ICT.2007.4569464
Publication status	Published - 2007
Externally published	Yes
Event	ICT'07 - 26th International Conference on Thermoelectrics - Jeju, Korea, Republic of Duration: Jun 3 2007 → Jun 7 2007

Publication series

Name	International Conference on Thermoelectrics, ICT, Proceedings

Other

Other	ICT'07 - 26th International Conference on Thermoelectrics
Country/Territory	Korea, Republic of
City	Jeju
Period	6/3/07 → 6/7/07

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/ICT.2007.4569464

Cite this

Takasu, Y., Hasegawa, T., Ogita, N., Udagawa, M., Suekuni, K., Avila, M. A., & Takabatake, T. (2007). Dynamical motion of a guest ion studied by Raman scattering and the lattice thermal conductivity in A₈Ga₁₆Si_30-xGe _x (A = Ba, Sr). In Proceedings ICT'07 - 26th International Conference on Thermoelectrics (pp. 223-225). [4569464] (International Conference on Thermoelectrics, ICT, Proceedings). https://doi.org/10.1109/ICT.2007.4569464

Dynamical motion of a guest ion studied by Raman scattering and the lattice thermal conductivity in A₈Ga₁₆Si_30-xGe _x (A = Ba, Sr). / Takasu, Y.; Hasegawa, T.; Ogita, N. et al.
Proceedings ICT'07 - 26th International Conference on Thermoelectrics. 2007. p. 223-225 4569464 (International Conference on Thermoelectrics, ICT, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takasu, Y, Hasegawa, T, Ogita, N, Udagawa, M, Suekuni, K, Avila, MA & Takabatake, T 2007, Dynamical motion of a guest ion studied by Raman scattering and the lattice thermal conductivity in A₈Ga₁₆Si_30-xGe _x (A = Ba, Sr). in Proceedings ICT'07 - 26th International Conference on Thermoelectrics., 4569464, International Conference on Thermoelectrics, ICT, Proceedings, pp. 223-225, ICT'07 - 26th International Conference on Thermoelectrics, Jeju, Korea, Republic of, 6/3/07. https://doi.org/10.1109/ICT.2007.4569464

Takasu Y, Hasegawa T, Ogita N, Udagawa M, Suekuni K, Avila MA et al. Dynamical motion of a guest ion studied by Raman scattering and the lattice thermal conductivity in A₈Ga₁₆Si_30-xGe _x (A = Ba, Sr). In Proceedings ICT'07 - 26th International Conference on Thermoelectrics. 2007. p. 223-225. 4569464. (International Conference on Thermoelectrics, ICT, Proceedings). doi: 10.1109/ICT.2007.4569464

@inproceedings{4a2b056ecf0d4183b9ebd1f12082c778,

title = "Dynamical motion of a guest ion studied by Raman scattering and the lattice thermal conductivity in A8Ga16Si30-xGe x (A = Ba, Sr)",

abstract = "Dynamical motions of a guest ion in type-I clathrate compounds have been investigated using Raman scattering. It has been found that the 4th order anharmonic potential is important for the guest ion motion not only for A 8Ga16Ge30 (A=Ba, Sr, Eu), but also for A 8Ga16Si30-xGex (A = Ba, Sr). The substitution of Ge expands isotropically the cage at 6d-site for Ba 8Ga16Si30-xGex, however, anisotropically for Sr8Ga16Si30-xGe x. Especially, for Sr8Ga16Si 30-xGex, the off-center rattling develops with increasing Ge concentration and plays an important role to the suppression of the lattice thermal conductivity.",

author = "Y. Takasu and T. Hasegawa and N. Ogita and M. Udagawa and K. Suekuni and Avila, {M. A.} and T. Takabatake",

year = "2007",

doi = "10.1109/ICT.2007.4569464",

language = "English",

isbn = "9781424422623",

series = "International Conference on Thermoelectrics, ICT, Proceedings",

pages = "223--225",

booktitle = "Proceedings ICT'07 - 26th International Conference on Thermoelectrics",

note = "ICT'07 - 26th International Conference on Thermoelectrics ; Conference date: 03-06-2007 Through 07-06-2007",

}

TY - GEN

T1 - Dynamical motion of a guest ion studied by Raman scattering and the lattice thermal conductivity in A8Ga16Si30-xGe x (A = Ba, Sr)

AU - Takasu, Y.

AU - Hasegawa, T.

AU - Ogita, N.

AU - Udagawa, M.

AU - Suekuni, K.

AU - Avila, M. A.

AU - Takabatake, T.

PY - 2007

Y1 - 2007

N2 - Dynamical motions of a guest ion in type-I clathrate compounds have been investigated using Raman scattering. It has been found that the 4th order anharmonic potential is important for the guest ion motion not only for A 8Ga16Ge30 (A=Ba, Sr, Eu), but also for A 8Ga16Si30-xGex (A = Ba, Sr). The substitution of Ge expands isotropically the cage at 6d-site for Ba 8Ga16Si30-xGex, however, anisotropically for Sr8Ga16Si30-xGe x. Especially, for Sr8Ga16Si 30-xGex, the off-center rattling develops with increasing Ge concentration and plays an important role to the suppression of the lattice thermal conductivity.

AB - Dynamical motions of a guest ion in type-I clathrate compounds have been investigated using Raman scattering. It has been found that the 4th order anharmonic potential is important for the guest ion motion not only for A 8Ga16Ge30 (A=Ba, Sr, Eu), but also for A 8Ga16Si30-xGex (A = Ba, Sr). The substitution of Ge expands isotropically the cage at 6d-site for Ba 8Ga16Si30-xGex, however, anisotropically for Sr8Ga16Si30-xGe x. Especially, for Sr8Ga16Si 30-xGex, the off-center rattling develops with increasing Ge concentration and plays an important role to the suppression of the lattice thermal conductivity.

UR - http://www.scopus.com/inward/record.url?scp=51849120169&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51849120169&partnerID=8YFLogxK

U2 - 10.1109/ICT.2007.4569464

DO - 10.1109/ICT.2007.4569464

M3 - Conference contribution

AN - SCOPUS:51849120169

SN - 9781424422623

T3 - International Conference on Thermoelectrics, ICT, Proceedings

SP - 223

EP - 225

BT - Proceedings ICT'07 - 26th International Conference on Thermoelectrics

T2 - ICT'07 - 26th International Conference on Thermoelectrics

Y2 - 3 June 2007 through 7 June 2007

ER -