Dynamics of photo-excitation for the ablation of 4H-SiC substrate using femtosecond laser

Keigo Matsunaga; Terutake Hayashi; Syuhei Kurokawa; Hideaki Yokoo; Noboru Hasegawa; Masaharu Nishikino; Yoji Matsukawa

doi:10.1299/jsmelem.2017.9.046

Dynamics of photo-excitation for the ablation of 4H-SiC substrate using femtosecond laser

Keigo Matsunaga, Terutake Hayashi, Syuhei Kurokawa, Hideaki Yokoo, Noboru Hasegawa, Masaharu Nishikino, Yoji Matsukawa

Manufacturing Process

Research output: Contribution to conference › Paper › peer-review

Abstract

The authors suggest a low fluence laser processing method for a power semiconductor wafer using a femtosecond double-pulse beam. In this report, we investigate the temporal variation of the surface reflectivity after the ultrafast laser irradiation as a result of a surface photo-excitation. In the double pulse processing method, the surface reflectivity is constantly high until 5 ps after the first pulse irradiation and then gradually decreased with increasing the time interval to shot the second pulse. In addition, the laser induced damage on SiC target is observed at a bottom of the ablated crater by using scanning transmission electron microscope (STEM). The thin amorphous layer whose thickness is about 10 nm can be observed at the ablated area.

Original language	English
DOIs	https://doi.org/10.1299/jsmelem.2017.9.046
Publication status	Published - Nov 13 2017
Event	9th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2017 - Hiroshima City, Japan Duration: Nov 13 2017 → Nov 17 2017

Other

Other	9th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2017
Country/Territory	Japan
City	Hiroshima City
Period	11/13/17 → 11/17/17

All Science Journal Classification (ASJC) codes

Industrial and Manufacturing Engineering

Access to Document

10.1299/jsmelem.2017.9.046

Cite this

Matsunaga, K, Hayashi, T , Kurokawa, S, Yokoo, H, Hasegawa, N, Nishikino, M & Matsukawa, Y 2017, 'Dynamics of photo-excitation for the ablation of 4H-SiC substrate using femtosecond laser', Paper presented at 9th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2017, Hiroshima City, Japan, 11/13/17 - 11/17/17. https://doi.org/10.1299/jsmelem.2017.9.046

@conference{29ef455fea6548beac4a72ebcf2c61dc,

title = "Dynamics of photo-excitation for the ablation of 4H-SiC substrate using femtosecond laser",

abstract = "The authors suggest a low fluence laser processing method for a power semiconductor wafer using a femtosecond double-pulse beam. In this report, we investigate the temporal variation of the surface reflectivity after the ultrafast laser irradiation as a result of a surface photo-excitation. In the double pulse processing method, the surface reflectivity is constantly high until 5 ps after the first pulse irradiation and then gradually decreased with increasing the time interval to shot the second pulse. In addition, the laser induced damage on SiC target is observed at a bottom of the ablated crater by using scanning transmission electron microscope (STEM). The thin amorphous layer whose thickness is about 10 nm can be observed at the ablated area.",

author = "Keigo Matsunaga and Terutake Hayashi and Syuhei Kurokawa and Hideaki Yokoo and Noboru Hasegawa and Masaharu Nishikino and Yoji Matsukawa",

year = "2017",

month = nov,

day = "13",

doi = "10.1299/jsmelem.2017.9.046",

language = "English",

note = "9th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2017 ; Conference date: 13-11-2017 Through 17-11-2017",

}

TY - CONF

T1 - Dynamics of photo-excitation for the ablation of 4H-SiC substrate using femtosecond laser

AU - Matsunaga, Keigo

AU - Hayashi, Terutake

AU - Kurokawa, Syuhei

AU - Yokoo, Hideaki

AU - Hasegawa, Noboru

AU - Nishikino, Masaharu

AU - Matsukawa, Yoji

PY - 2017/11/13

Y1 - 2017/11/13

N2 - The authors suggest a low fluence laser processing method for a power semiconductor wafer using a femtosecond double-pulse beam. In this report, we investigate the temporal variation of the surface reflectivity after the ultrafast laser irradiation as a result of a surface photo-excitation. In the double pulse processing method, the surface reflectivity is constantly high until 5 ps after the first pulse irradiation and then gradually decreased with increasing the time interval to shot the second pulse. In addition, the laser induced damage on SiC target is observed at a bottom of the ablated crater by using scanning transmission electron microscope (STEM). The thin amorphous layer whose thickness is about 10 nm can be observed at the ablated area.

AB - The authors suggest a low fluence laser processing method for a power semiconductor wafer using a femtosecond double-pulse beam. In this report, we investigate the temporal variation of the surface reflectivity after the ultrafast laser irradiation as a result of a surface photo-excitation. In the double pulse processing method, the surface reflectivity is constantly high until 5 ps after the first pulse irradiation and then gradually decreased with increasing the time interval to shot the second pulse. In addition, the laser induced damage on SiC target is observed at a bottom of the ablated crater by using scanning transmission electron microscope (STEM). The thin amorphous layer whose thickness is about 10 nm can be observed at the ablated area.

UR - http://www.scopus.com/inward/record.url?scp=85041341709&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85041341709&partnerID=8YFLogxK

U2 - 10.1299/jsmelem.2017.9.046

DO - 10.1299/jsmelem.2017.9.046

M3 - Paper

AN - SCOPUS:85041341709

T2 - 9th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2017

Y2 - 13 November 2017 through 17 November 2017

ER -

Dynamics of photo-excitation for the ablation of 4H-SiC substrate using femtosecond laser

Abstract

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this