Dynamics of photo-excitation for the ablation of 4H-SiC substrate using femtosecond laser

Keigo Matsunaga, Terutake Hayashi, Syuhei Kurokawa, Hideaki Yokoo, Noboru Hasegawa, Masaharu Nishikino, Yoji Matsukawa

Research output: Contribution to conferencePaper

Abstract

The authors suggest a low fluence laser processing method for a power semiconductor wafer using a femtosecond double-pulse beam. In this report, we investigate the temporal variation of the surface reflectivity after the ultrafast laser irradiation as a result of a surface photo-excitation. In the double pulse processing method, the surface reflectivity is constantly high until 5 ps after the first pulse irradiation and then gradually decreased with increasing the time interval to shot the second pulse. In addition, the laser induced damage on SiC target is observed at a bottom of the ablated crater by using scanning transmission electron microscope (STEM). The thin amorphous layer whose thickness is about 10 nm can be observed at the ablated area.

Original languageEnglish
DOIs
Publication statusPublished - Nov 13 2017
Event9th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2017 - Hiroshima City, Japan
Duration: Nov 13 2017Nov 17 2017

Other

Other9th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2017
CountryJapan
CityHiroshima City
Period11/13/1711/17/17

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering

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    Matsunaga, K., Hayashi, T., Kurokawa, S., Yokoo, H., Hasegawa, N., Nishikino, M., & Matsukawa, Y. (2017). Dynamics of photo-excitation for the ablation of 4H-SiC substrate using femtosecond laser. Paper presented at 9th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2017, Hiroshima City, Japan. https://doi.org/10.1299/jsmelem.2017.9.046