Abstract
We investigate the dynamics of photoexcited carriers in a single monolayer graphene at room temperature in air by femtosecond time-resolved luminescence measurements. The luminescence kinetics observed in the near-infrared region from 0.7 to 0.9 eV are analyzed based on the two-temperature model describing the cooling of thermalized carriers due to the carrier-optical-phonon coupling. The observed luminescence kinetics are well reproduced by the model, though the calculated electron temperature increases only to ∼420 K at the maximum, which is much lower than the optical phonon energies. This indicates the predominance of optical phonons over acoustic phonons in the carrier-phonon interaction even at a temperature of ∼400 K.
| Original language | English |
|---|---|
| Title of host publication | Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 |
| Publisher | American Institute of Physics Inc. |
| Pages | 167-168 |
| Number of pages | 2 |
| ISBN (Print) | 9780735411944 |
| DOIs | |
| Publication status | Published - Jan 1 2013 |
| Event | 31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland Duration: Jul 29 2012 → Aug 3 2012 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 1566 |
| ISSN (Print) | 0094-243X |
| ISSN (Electronic) | 1551-7616 |
Other
| Other | 31st International Conference on the Physics of Semiconductors, ICPS 2012 |
|---|---|
| Country | Switzerland |
| City | Zurich |
| Period | 7/29/12 → 8/3/12 |
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All Science Journal Classification (ASJC) codes
- Ecology, Evolution, Behavior and Systematics
- Ecology
- Plant Science
- Physics and Astronomy(all)
- Nature and Landscape Conservation
Cite this
Dynamics of photoexcited carriers in monolayer epitaxial graphene probed by photoluminescence in the near-infrared region. / Koyama, Takeshi; Ito, Yoshito; Yoshida, Kazuma; Ago, Hiroki; Nakamura, Arao.
Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. American Institute of Physics Inc., 2013. p. 167-168 (AIP Conference Proceedings; Vol. 1566).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Dynamics of photoexcited carriers in monolayer epitaxial graphene probed by photoluminescence in the near-infrared region
AU - Koyama, Takeshi
AU - Ito, Yoshito
AU - Yoshida, Kazuma
AU - Ago, Hiroki
AU - Nakamura, Arao
PY - 2013/1/1
Y1 - 2013/1/1
N2 - We investigate the dynamics of photoexcited carriers in a single monolayer graphene at room temperature in air by femtosecond time-resolved luminescence measurements. The luminescence kinetics observed in the near-infrared region from 0.7 to 0.9 eV are analyzed based on the two-temperature model describing the cooling of thermalized carriers due to the carrier-optical-phonon coupling. The observed luminescence kinetics are well reproduced by the model, though the calculated electron temperature increases only to ∼420 K at the maximum, which is much lower than the optical phonon energies. This indicates the predominance of optical phonons over acoustic phonons in the carrier-phonon interaction even at a temperature of ∼400 K.
AB - We investigate the dynamics of photoexcited carriers in a single monolayer graphene at room temperature in air by femtosecond time-resolved luminescence measurements. The luminescence kinetics observed in the near-infrared region from 0.7 to 0.9 eV are analyzed based on the two-temperature model describing the cooling of thermalized carriers due to the carrier-optical-phonon coupling. The observed luminescence kinetics are well reproduced by the model, though the calculated electron temperature increases only to ∼420 K at the maximum, which is much lower than the optical phonon energies. This indicates the predominance of optical phonons over acoustic phonons in the carrier-phonon interaction even at a temperature of ∼400 K.
UR - http://www.scopus.com/inward/record.url?scp=84907337658&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84907337658&partnerID=8YFLogxK
U2 - 10.1063/1.4848338
DO - 10.1063/1.4848338
M3 - Conference contribution
AN - SCOPUS:84907337658
SN - 9780735411944
T3 - AIP Conference Proceedings
SP - 167
EP - 168
BT - Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
PB - American Institute of Physics Inc.
ER -