Easy removal of mold for imprint lithography by ion beam modification of photoresist surface

A. Baba, M. Iwamoto, K. Tsubaki, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Summary form only given. We have found that ion beam modification of the novolac photoresist surface is very effective in removing mold in NIL. Using this process, step-and-repeat pattern transfer becomes possible. In addition, this process can increase the imprint depth.

Original languageEnglish
Title of host publication2001 International Microprocesses and Nanotechnology Conference, MNC 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages96-97
Number of pages2
ISBN (Electronic)4891140178, 9784891140175
DOIs
Publication statusPublished - Jan 1 2001
EventInternational Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan
Duration: Oct 31 2001Nov 2 2001

Publication series

Name2001 International Microprocesses and Nanotechnology Conference, MNC 2001

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2001
CountryJapan
CityShimane
Period10/31/0111/2/01

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All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Fluid Flow and Transfer Processes
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Baba, A., Iwamoto, M., Tsubaki, K., & Asano, T. (2001). Easy removal of mold for imprint lithography by ion beam modification of photoresist surface. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001 (pp. 96-97). [984106] (2001 International Microprocesses and Nanotechnology Conference, MNC 2001). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2001.984106