ECR plasma oxidation: Dependence on energy of argon ion

S. Matsuo, M. Yamamoto, Taizoh Sadoh, T. Tsurushima, D. W. Gao, Katsuhiko Furukawa, Hiroshi Nakashima

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Effects of ion-irradiation on oxidation of silicon at low temperatures (130 °C) in an argon and oxygen mixed plasma excited by electron cyclotron resonance (ECR) interaction are investigated. First, dependence of energy and flux of incident ions on the flow rate and the microwave power is evaluated. It is shown that the flow rate and the microwave power are key parameters for controlling the energy and the flux of incident ions, respectively. Second, growth kinetics of the oxide films are studied. The growth rate depends on the energy and the flux of argon ions irradiated to the substrate, and the growth thickness increases proportionally to the root square of the oxidation time. Thus, the growth rate is limited by diffusion of oxidants enhanced by irradiation with argon ions. The effect of substrate bias on oxidation characteristics is also discussed. The electrical properties of the oxide films are improved by increasing the bias. The improvement is due to the reduction of damage at the surface of the substrate induced by the irradiation.

Original languageEnglish
Pages (from-to)171-176
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume585
Publication statusPublished - Dec 1 2000
EventFundamental Mechanisms of Low-Energy-Beam-Modified Surface Growth and Processing - Boston, MA, USA
Duration: Nov 29 2000Dec 2 2000

Fingerprint

Electron cyclotron resonance
Argon
electron cyclotron resonance
argon
Ions
Plasmas
Oxidation
oxidation
Fluxes
Oxide films
oxide films
ions
Substrates
flow velocity
Microwaves
Flow rate
Irradiation
microwaves
irradiation
energy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

ECR plasma oxidation : Dependence on energy of argon ion. / Matsuo, S.; Yamamoto, M.; Sadoh, Taizoh; Tsurushima, T.; Gao, D. W.; Furukawa, Katsuhiko; Nakashima, Hiroshi.

In: Materials Research Society Symposium - Proceedings, Vol. 585, 01.12.2000, p. 171-176.

Research output: Contribution to journalConference article

@article{6d66ffe4122e4c0d8faa7b027d427160,
title = "ECR plasma oxidation: Dependence on energy of argon ion",
abstract = "Effects of ion-irradiation on oxidation of silicon at low temperatures (130 °C) in an argon and oxygen mixed plasma excited by electron cyclotron resonance (ECR) interaction are investigated. First, dependence of energy and flux of incident ions on the flow rate and the microwave power is evaluated. It is shown that the flow rate and the microwave power are key parameters for controlling the energy and the flux of incident ions, respectively. Second, growth kinetics of the oxide films are studied. The growth rate depends on the energy and the flux of argon ions irradiated to the substrate, and the growth thickness increases proportionally to the root square of the oxidation time. Thus, the growth rate is limited by diffusion of oxidants enhanced by irradiation with argon ions. The effect of substrate bias on oxidation characteristics is also discussed. The electrical properties of the oxide films are improved by increasing the bias. The improvement is due to the reduction of damage at the surface of the substrate induced by the irradiation.",
author = "S. Matsuo and M. Yamamoto and Taizoh Sadoh and T. Tsurushima and Gao, {D. W.} and Katsuhiko Furukawa and Hiroshi Nakashima",
year = "2000",
month = "12",
day = "1",
language = "English",
volume = "585",
pages = "171--176",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

TY - JOUR

T1 - ECR plasma oxidation

T2 - Dependence on energy of argon ion

AU - Matsuo, S.

AU - Yamamoto, M.

AU - Sadoh, Taizoh

AU - Tsurushima, T.

AU - Gao, D. W.

AU - Furukawa, Katsuhiko

AU - Nakashima, Hiroshi

PY - 2000/12/1

Y1 - 2000/12/1

N2 - Effects of ion-irradiation on oxidation of silicon at low temperatures (130 °C) in an argon and oxygen mixed plasma excited by electron cyclotron resonance (ECR) interaction are investigated. First, dependence of energy and flux of incident ions on the flow rate and the microwave power is evaluated. It is shown that the flow rate and the microwave power are key parameters for controlling the energy and the flux of incident ions, respectively. Second, growth kinetics of the oxide films are studied. The growth rate depends on the energy and the flux of argon ions irradiated to the substrate, and the growth thickness increases proportionally to the root square of the oxidation time. Thus, the growth rate is limited by diffusion of oxidants enhanced by irradiation with argon ions. The effect of substrate bias on oxidation characteristics is also discussed. The electrical properties of the oxide films are improved by increasing the bias. The improvement is due to the reduction of damage at the surface of the substrate induced by the irradiation.

AB - Effects of ion-irradiation on oxidation of silicon at low temperatures (130 °C) in an argon and oxygen mixed plasma excited by electron cyclotron resonance (ECR) interaction are investigated. First, dependence of energy and flux of incident ions on the flow rate and the microwave power is evaluated. It is shown that the flow rate and the microwave power are key parameters for controlling the energy and the flux of incident ions, respectively. Second, growth kinetics of the oxide films are studied. The growth rate depends on the energy and the flux of argon ions irradiated to the substrate, and the growth thickness increases proportionally to the root square of the oxidation time. Thus, the growth rate is limited by diffusion of oxidants enhanced by irradiation with argon ions. The effect of substrate bias on oxidation characteristics is also discussed. The electrical properties of the oxide films are improved by increasing the bias. The improvement is due to the reduction of damage at the surface of the substrate induced by the irradiation.

UR - http://www.scopus.com/inward/record.url?scp=0034514725&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034514725&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034514725

VL - 585

SP - 171

EP - 176

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -