Transport in InAs/GaSb heterostructures with different InAs layer thicknesses is studied using a six-terminal Hall bar geometry with a 2-μm edge channel length. For a sample with a 12-nm-thick InAs layer, nonlocal resistance measurements with various current/voltage contact configurations reveal that the transport is dominated by edge channels with a negligible bulk contribution. Systematic nonlocal measurements allow us to extract the resistance of individual edge channels, revealing sharp resistance fluctuations indicative of inelastic scattering. Our results show that the InAs/GaSb system can be tailored to have conducting edge channels while keeping a gap in the bulk region and provide a way of studying two-dimensional topological insulators even when quantized transport is absent.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - Jun 18 2013|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics