Edge channel transport in the InAs/GaSb topological insulating phase

Kyoichi Suzuki, Yuichi Harada, Koji Onomitsu, Koji Muraki

Research output: Contribution to journalArticle

73 Citations (Scopus)

Abstract

Transport in InAs/GaSb heterostructures with different InAs layer thicknesses is studied using a six-terminal Hall bar geometry with a 2-μm edge channel length. For a sample with a 12-nm-thick InAs layer, nonlocal resistance measurements with various current/voltage contact configurations reveal that the transport is dominated by edge channels with a negligible bulk contribution. Systematic nonlocal measurements allow us to extract the resistance of individual edge channels, revealing sharp resistance fluctuations indicative of inelastic scattering. Our results show that the InAs/GaSb system can be tailored to have conducting edge channels while keeping a gap in the bulk region and provide a way of studying two-dimensional topological insulators even when quantized transport is absent.

Original languageEnglish
Article number235311
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume87
Issue number23
DOIs
Publication statusPublished - Jun 18 2013
Externally publishedYes

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Inelastic scattering
Heterojunctions
Geometry
Electric potential
inelastic scattering
insulators
conduction
indium arsenide
electric potential
geometry
configurations

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Edge channel transport in the InAs/GaSb topological insulating phase. / Suzuki, Kyoichi; Harada, Yuichi; Onomitsu, Koji; Muraki, Koji.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 87, No. 23, 235311, 18.06.2013.

Research output: Contribution to journalArticle

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