Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage

H. Fukano; A. Kozen; Kazutoshi Kato; O. Nakajima

doi:10.1049/el:19961590

Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage

H. Fukano, A. Kozen, Kazutoshi Kato, O. Nakajima

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The authors propose a novel edge-illuminated refracting-facet photodiode (RFPD), where the incident light parallel to the up-side surface is refracted at an angled facet and absorbed in a thin absorption layer. Fabricated RFPDs with an absorption layer thickness of 1.5μm show a responsivity as high as 0.96A/W even at a bias voltage of 0.5V for a flat-ended singlemode fibre.

Original language	English
Pages (from-to)	2346-2348
Number of pages	3
Journal	Electronics Letters
Volume	32
Issue number	25
DOIs	https://doi.org/10.1049/el:19961590
Publication status	Published - Dec 5 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19961590

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title = "Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage",

abstract = "The authors propose a novel edge-illuminated refracting-facet photodiode (RFPD), where the incident light parallel to the up-side surface is refracted at an angled facet and absorbed in a thin absorption layer. Fabricated RFPDs with an absorption layer thickness of 1.5μm show a responsivity as high as 0.96A/W even at a bias voltage of 0.5V for a flat-ended singlemode fibre.",

author = "H. Fukano and A. Kozen and Kazutoshi Kato and O. Nakajima",

year = "1996",

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doi = "10.1049/el:19961590",

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T1 - Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage

AU - Fukano, H.

AU - Kozen, A.

AU - Kato, Kazutoshi

AU - Nakajima, O.

PY - 1996/12/5

Y1 - 1996/12/5

N2 - The authors propose a novel edge-illuminated refracting-facet photodiode (RFPD), where the incident light parallel to the up-side surface is refracted at an angled facet and absorbed in a thin absorption layer. Fabricated RFPDs with an absorption layer thickness of 1.5μm show a responsivity as high as 0.96A/W even at a bias voltage of 0.5V for a flat-ended singlemode fibre.

AB - The authors propose a novel edge-illuminated refracting-facet photodiode (RFPD), where the incident light parallel to the up-side surface is refracted at an angled facet and absorbed in a thin absorption layer. Fabricated RFPDs with an absorption layer thickness of 1.5μm show a responsivity as high as 0.96A/W even at a bias voltage of 0.5V for a flat-ended singlemode fibre.

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DO - 10.1049/el:19961590

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JO - Electronics Letters

JF - Electronics Letters

IS - 25

ER -

Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage

Abstract

All Science Journal Classification (ASJC) codes

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