Abstract
A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV%) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 + 0.06 and 0.46 + 0.03 have been obtained for single NV% centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV% centers near the surface compared with the states obtained for alternatively terminated surfaces.
| Original language | English |
|---|---|
| Article number | 055503 |
| Journal | Applied Physics Express |
| Volume | 10 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - May 1 2017 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond. / Kageura, Taisuke; Kato, Kanami; Yamano, Hayate; Suaebah, Evi; Kajiya, Miki; Kawai, Sora; Inaba, Masafumi; Tanii, Takashi; Haruyama, Moriyoshi; Yamada, Keisuke; Onoda, Shinobu; Kada, Wataru; Hanaizumi, Osamu; Teraji, Tokuyuki; Isoya, Junichi; Kono, Shozo; Kawarada, Hiroshi.
In: Applied Physics Express, Vol. 10, No. 5, 055503, 01.05.2017.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond
AU - Kageura, Taisuke
AU - Kato, Kanami
AU - Yamano, Hayate
AU - Suaebah, Evi
AU - Kajiya, Miki
AU - Kawai, Sora
AU - Inaba, Masafumi
AU - Tanii, Takashi
AU - Haruyama, Moriyoshi
AU - Yamada, Keisuke
AU - Onoda, Shinobu
AU - Kada, Wataru
AU - Hanaizumi, Osamu
AU - Teraji, Tokuyuki
AU - Isoya, Junichi
AU - Kono, Shozo
AU - Kawarada, Hiroshi
PY - 2017/5/1
Y1 - 2017/5/1
N2 - A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV%) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 + 0.06 and 0.46 + 0.03 have been obtained for single NV% centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV% centers near the surface compared with the states obtained for alternatively terminated surfaces.
AB - A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV%) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 + 0.06 and 0.46 + 0.03 have been obtained for single NV% centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV% centers near the surface compared with the states obtained for alternatively terminated surfaces.
UR - http://www.scopus.com/inward/record.url?scp=85018961845&partnerID=8YFLogxK
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U2 - 10.7567/APEX.10.055503
DO - 10.7567/APEX.10.055503
M3 - Article
VL - 10
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 5
M1 - 055503
ER -