Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond

Taisuke Kageura; Kanami Kato; Hayate Yamano; Evi Suaebah; Miki Kajiya; Sora Kawai; Masafumi Inaba; Takashi Tanii; Moriyoshi Haruyama; Keisuke Yamada; Shinobu Onoda; Wataru Kada; Osamu Hanaizumi; Tokuyuki Teraji; Junichi Isoya; Shozo Kono; Hiroshi Kawarada

doi:10.7567/APEX.10.055503

Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond

Taisuke Kageura, Kanami Kato, Hayate Yamano, Evi Suaebah, Miki Kajiya, Sora Kawai, Masafumi Inaba, Takashi Tanii, Moriyoshi Haruyama, Keisuke Yamada, Shinobu Onoda, Wataru Kada, Osamu Hanaizumi, Tokuyuki Teraji, Junichi Isoya, Shozo Kono, Hiroshi Kawarada

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22 Citations (Scopus)

Abstract

A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV%) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 + 0.06 and 0.46 + 0.03 have been obtained for single NV% centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV% centers near the surface compared with the states obtained for alternatively terminated surfaces.

Original language	English
Article number	055503
Journal	Applied Physics Express
Volume	10
Issue number	5
DOIs	https://doi.org/10.7567/APEX.10.055503
Publication status	Published - May 2017
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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Kageura, T., Kato, K., Yamano, H., Suaebah, E., Kajiya, M., Kawai, S., Inaba, M., Tanii, T., Haruyama, M., Yamada, K., Onoda, S., Kada, W., Hanaizumi, O., Teraji, T., Isoya, J., Kono, S., & Kawarada, H. (2017). Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond. Applied Physics Express, 10(5), [055503]. https://doi.org/10.7567/APEX.10.055503

Kageura, T, Kato, K, Yamano, H, Suaebah, E, Kajiya, M, Kawai, S, Inaba, M, Tanii, T, Haruyama, M, Yamada, K, Onoda, S, Kada, W, Hanaizumi, O, Teraji, T, Isoya, J, Kono, S & Kawarada, H 2017, 'Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond', Applied Physics Express, vol. 10, no. 5, 055503. https://doi.org/10.7567/APEX.10.055503

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title = "Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond",

abstract = "A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV%) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 + 0.06 and 0.46 + 0.03 have been obtained for single NV% centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV% centers near the surface compared with the states obtained for alternatively terminated surfaces.",

author = "Taisuke Kageura and Kanami Kato and Hayate Yamano and Evi Suaebah and Miki Kajiya and Sora Kawai and Masafumi Inaba and Takashi Tanii and Moriyoshi Haruyama and Keisuke Yamada and Shinobu Onoda and Wataru Kada and Osamu Hanaizumi and Tokuyuki Teraji and Junichi Isoya and Shozo Kono and Hiroshi Kawarada",

note = "Funding Information: This work was supported by a Grant-in-Aid for Scientific Research (S) (Grant Number 26220903), Grant-in-Aid for Scientific Research (A) (Grant Number 26246001), and Grant-in-Aid for Scientific Research (B) (Grant Number 15H03980) from the Japan Society for the Promotion of Science (JSPS). We thank Dr. Liam P. McGuinness and Professor Fedor Jelezko for their help with setting up the CFM. Publisher Copyright: {\textcopyright} 2017 The Japan Society of Applied Physics.",

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doi = "10.7567/APEX.10.055503",

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AU - Kageura, Taisuke

AU - Kato, Kanami

AU - Yamano, Hayate

AU - Suaebah, Evi

AU - Kajiya, Miki

AU - Kawai, Sora

AU - Inaba, Masafumi

AU - Tanii, Takashi

AU - Haruyama, Moriyoshi

AU - Yamada, Keisuke

AU - Onoda, Shinobu

AU - Kada, Wataru

AU - Hanaizumi, Osamu

AU - Teraji, Tokuyuki

AU - Isoya, Junichi

AU - Kono, Shozo

AU - Kawarada, Hiroshi

N1 - Funding Information: This work was supported by a Grant-in-Aid for Scientific Research (S) (Grant Number 26220903), Grant-in-Aid for Scientific Research (A) (Grant Number 26246001), and Grant-in-Aid for Scientific Research (B) (Grant Number 15H03980) from the Japan Society for the Promotion of Science (JSPS). We thank Dr. Liam P. McGuinness and Professor Fedor Jelezko for their help with setting up the CFM. Publisher Copyright: © 2017 The Japan Society of Applied Physics.

PY - 2017/5

Y1 - 2017/5

N2 - A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV%) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 + 0.06 and 0.46 + 0.03 have been obtained for single NV% centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV% centers near the surface compared with the states obtained for alternatively terminated surfaces.

AB - A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV%) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 + 0.06 and 0.46 + 0.03 have been obtained for single NV% centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV% centers near the surface compared with the states obtained for alternatively terminated surfaces.

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Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond

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