### Abstract

Single-crystal samples of the type VIII clathrate Ba _{8}Ga _{16-x} Al _{x} Sn _{30} (0 ≤ x ≤ 12) were prepared by the Sn-flux method, and the structural and electrical properties were studied from 300 K to 600 K. The lattice parameter increases linearly as x is increased from 0 to 10.5, which is the solubility limit of Al. For all samples, the electrical conductivity σ decreases monotonically as the temperature is increased. σ(T = 300 K) increases from 1.88 × 10 ^{4} S/m for x = 0 to 3.03 × 10 ^{4} S/m for x = 2, and then gradually decreases to 2.4 × 10 ^{4} S/m with further increase of x to 8. The increase of σ for Al-substituted samples is attributed to enhancement of carrier mobility. The Seebeck coefficients of samples with 0 ≤ x ≤ 8 are negative with large values, and the absolute values increase from 240 μV/K to 320 μV/K as the temperature increases from 300 K to 600 K. At 300 K, the effective mass m*/m _{0} is in the range from 0.53 to 0.67, and the samples with x = 6 and x = 8 have a rather low thermal conductivity of 0.72 W/mK and 0.78 W/mK, respectively. ZT reaches 1.2 at 500 K for x = 6.

Original language | English |
---|---|

Pages (from-to) | 1124-1128 |

Number of pages | 5 |

Journal | Journal of Electronic Materials |

Volume | 40 |

Issue number | 5 |

DOIs | |

Publication status | Published - May 1 2011 |

Externally published | Yes |

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### All Science Journal Classification (ASJC) codes

- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry

### Cite this

_{8}Ga

_{16}Sn

_{30}

*Journal of Electronic Materials*,

*40*(5), 1124-1128. https://doi.org/10.1007/s11664-011-1555-7

**Effect of Al substitution on the thermoelectric properties of the type VIII clathrate Ba _{8}Ga _{16}Sn _{30} .** / Deng, S. K.; Saiga, Y.; Suekuni, Koichiro; Takabatake, T.

Research output: Contribution to journal › Article

_{8}Ga

_{16}Sn

_{30}',

*Journal of Electronic Materials*, vol. 40, no. 5, pp. 1124-1128. https://doi.org/10.1007/s11664-011-1555-7

_{8}Ga

_{16}Sn

_{30}Journal of Electronic Materials. 2011 May 1;40(5):1124-1128. https://doi.org/10.1007/s11664-011-1555-7

}

TY - JOUR

T1 - Effect of Al substitution on the thermoelectric properties of the type VIII clathrate Ba 8Ga 16Sn 30

AU - Deng, S. K.

AU - Saiga, Y.

AU - Suekuni, Koichiro

AU - Takabatake, T.

PY - 2011/5/1

Y1 - 2011/5/1

N2 - Single-crystal samples of the type VIII clathrate Ba 8Ga 16-x Al x Sn 30 (0 ≤ x ≤ 12) were prepared by the Sn-flux method, and the structural and electrical properties were studied from 300 K to 600 K. The lattice parameter increases linearly as x is increased from 0 to 10.5, which is the solubility limit of Al. For all samples, the electrical conductivity σ decreases monotonically as the temperature is increased. σ(T = 300 K) increases from 1.88 × 10 4 S/m for x = 0 to 3.03 × 10 4 S/m for x = 2, and then gradually decreases to 2.4 × 10 4 S/m with further increase of x to 8. The increase of σ for Al-substituted samples is attributed to enhancement of carrier mobility. The Seebeck coefficients of samples with 0 ≤ x ≤ 8 are negative with large values, and the absolute values increase from 240 μV/K to 320 μV/K as the temperature increases from 300 K to 600 K. At 300 K, the effective mass m*/m 0 is in the range from 0.53 to 0.67, and the samples with x = 6 and x = 8 have a rather low thermal conductivity of 0.72 W/mK and 0.78 W/mK, respectively. ZT reaches 1.2 at 500 K for x = 6.

AB - Single-crystal samples of the type VIII clathrate Ba 8Ga 16-x Al x Sn 30 (0 ≤ x ≤ 12) were prepared by the Sn-flux method, and the structural and electrical properties were studied from 300 K to 600 K. The lattice parameter increases linearly as x is increased from 0 to 10.5, which is the solubility limit of Al. For all samples, the electrical conductivity σ decreases monotonically as the temperature is increased. σ(T = 300 K) increases from 1.88 × 10 4 S/m for x = 0 to 3.03 × 10 4 S/m for x = 2, and then gradually decreases to 2.4 × 10 4 S/m with further increase of x to 8. The increase of σ for Al-substituted samples is attributed to enhancement of carrier mobility. The Seebeck coefficients of samples with 0 ≤ x ≤ 8 are negative with large values, and the absolute values increase from 240 μV/K to 320 μV/K as the temperature increases from 300 K to 600 K. At 300 K, the effective mass m*/m 0 is in the range from 0.53 to 0.67, and the samples with x = 6 and x = 8 have a rather low thermal conductivity of 0.72 W/mK and 0.78 W/mK, respectively. ZT reaches 1.2 at 500 K for x = 6.

UR - http://www.scopus.com/inward/record.url?scp=79955911576&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955911576&partnerID=8YFLogxK

U2 - 10.1007/s11664-011-1555-7

DO - 10.1007/s11664-011-1555-7

M3 - Article

AN - SCOPUS:79955911576

VL - 40

SP - 1124

EP - 1128

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 5

ER -