Effect of Al2O3 deposition and subsequent annealing on passivation of defects in Ge-rich SiGe-on-insulator

Haigui Yang, Masatoshi Iyota, Shogo Ikeura, Dong Wang, Hiroshi Nakashima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) is proposed as an effective method to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates. We found that Al2O3-PDA could not only suppress the surface reaction during Al-PDA, but could also effectively reduce the defect-induced acceptor and hole concentration in Ge-rich SGOI. Al 2O3-PDA greatly improves the electrical characteristics of a back-gate metal-oxide-semiconductor field-effect transistor fabricated on Ge-rich SGOI.

Original languageEnglish
Title of host publicationTechnology Evolution for Silicon Nano-Electronics
Pages79-84
Number of pages6
DOIs
Publication statusPublished - Mar 23 2011
EventInternational Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE - Tokyo, Japan
Duration: Jun 3 2010Jun 5 2010

Publication series

NameKey Engineering Materials
Volume470
ISSN (Print)1013-9826

Other

OtherInternational Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE
CountryJapan
CityTokyo
Period6/3/106/5/10

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Yang, H., Iyota, M., Ikeura, S., Wang, D., & Nakashima, H. (2011). Effect of Al2O3 deposition and subsequent annealing on passivation of defects in Ge-rich SiGe-on-insulator. In Technology Evolution for Silicon Nano-Electronics (pp. 79-84). (Key Engineering Materials; Vol. 470). https://doi.org/10.4028/www.scientific.net/KEM.470.79