Effect of ambient oxygen partial pressure on the hydrogen response of SnO2 semiconductor gas sensors

Koichi Suematsu, Ken Watanabe, Masayoshi Yuasa, Tetsuya Kida, Kengo Shimanoe

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this study, the influence of the oxygen partial pressures (PO2) on the sensor response to H2 of SnO2 resistive-type gas sensors was evaluated under various humid atmospheres. SnO2 nanoparticles of 8–15 nm in diameter were synthesized using a hydrothermal technique followed by calcination at 600°C. Additionally, a large amount of pores with diameters greater than 10 nm was confirmed in the nanoparticles. The electrical resistance at 350°C was decreased with decreasing the PO2, and the electrical resistance in the presence of 10 ppm H2 was much smaller than that in the absence of H2 in both dry and humid atmospheres regardless of the PO2. Furthermore, the sensor response to 10 ppm H2 at 350°C increased with decreasing PO2 in both dry and humid atmospheres. Thus, decreasing the amount of oxygen adsorption enhanced the effect of rooted hydroxyl formation on the SnO2 surface through a combustion reaction between H2 and adsorbed oxygen and improved the sensor response to H2. These results are important for understanding the fundamental mechanisms of gas detection and for the material surface design of highly sensitive resistive-type semiconductor gas sensors.

Original languageEnglish
Pages (from-to)B618-B622
JournalJournal of the Electrochemical Society
Volume166
Issue number8
DOIs
Publication statusPublished - Jan 1 2019

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this