Effect of an atomically matched interface structure on Fermi-level pinning at metal/p-Ge interfaces

K. Kasahara, H. Yoshioka, Y. Tojo, T. Nishimura, S. Yamada, M. Miyao, K. Hamaya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Using low-temperature molecular beam epitaxy (LTMBE), we demonstrate high-quality heterointerfaces consisting of CoFe alloys and germanium (Ge) with a good atomic matching at the (111) plane. Electrical properties of the atomically matched CoFe/p-Ge(111) junctions with the area of (S) < ~10 μm2 clearly show the suppression of the Fermi-level pinning (FLP) effect, similar to the features of the atomically matched Fe3Si/p- Ge(111) junctions with S < ~10 μm2 in our previous work. This means that the suppression of FLP is independent on a kind of metals. As a result, we conclude that the formation of the atomically matched metal/Ge interfaces with almost no defects is important to suppress FLP.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 5
Subtitle of host publicationMaterials, Processing, and Devices
PublisherElectrochemical Society Inc.
Pages223-229
Number of pages7
Edition9
ISBN (Print)9781607683575
DOIs
Publication statusPublished - 2013
Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
Duration: Oct 7 2012Oct 12 2012

Publication series

NameECS Transactions
Number9
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Country/TerritoryUnited States
CityHonolulu, HI
Period10/7/1210/12/12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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