Effect of an atomically matched interface structure on Fermi-level pinning at metal/p-Ge interfaces

K. Kasahara; H. Yoshioka; Y. Tojo; T. Nishimura; S. Yamada; M. Miyao; K. Hamaya

doi:10.1149/05009.0223ecst

Effect of an atomically matched interface structure on Fermi-level pinning at metal/p-Ge interfaces

K. Kasahara, H. Yoshioka, Y. Tojo, T. Nishimura, S. Yamada, M. Miyao, K. Hamaya

Department of I&E Visionaries

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Using low-temperature molecular beam epitaxy (LTMBE), we demonstrate high-quality heterointerfaces consisting of CoFe alloys and germanium (Ge) with a good atomic matching at the (111) plane. Electrical properties of the atomically matched CoFe/p-Ge(111) junctions with the area of (S) < ~10 μm² clearly show the suppression of the Fermi-level pinning (FLP) effect, similar to the features of the atomically matched Fe₃Si/p- Ge(111) junctions with S < ~10 μm² in our previous work. This means that the suppression of FLP is independent on a kind of metals. As a result, we conclude that the formation of the atomically matched metal/Ge interfaces with almost no defects is important to suppress FLP.

Original language	English
Title of host publication	SiGe, Ge, and Related Compounds 5
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	223-229
Number of pages	7
Edition	9
ISBN (Print)	9781607683575
DOIs	https://doi.org/10.1149/05009.0223ecst
Publication status	Published - 2013
Event	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States Duration: Oct 7 2012 → Oct 12 2012

Publication series

Name	ECS Transactions
Number	9
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	10/7/12 → 10/12/12

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/05009.0223ecst

Cite this

Kasahara, K., Yoshioka, H., Tojo, Y., Nishimura, T., Yamada, S., Miyao, M., & Hamaya, K. (2013). Effect of an atomically matched interface structure on Fermi-level pinning at metal/p-Ge interfaces. In SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices (9 ed., pp. 223-229). (ECS Transactions; Vol. 50, No. 9). Electrochemical Society Inc.. https://doi.org/10.1149/05009.0223ecst

Effect of an atomically matched interface structure on Fermi-level pinning at metal/p-Ge interfaces. / Kasahara, K.; Yoshioka, H.; Tojo, Y.; Nishimura, T.; Yamada, S.; Miyao, M.; Hamaya, K.

SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9. ed. Electrochemical Society Inc., 2013. p. 223-229 (ECS Transactions; Vol. 50, No. 9).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kasahara, K, Yoshioka, H, Tojo, Y, Nishimura, T, Yamada, S, Miyao, M & Hamaya, K 2013, Effect of an atomically matched interface structure on Fermi-level pinning at metal/p-Ge interfaces. in SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 edn, ECS Transactions, no. 9, vol. 50, Electrochemical Society Inc., pp. 223-229, 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting, Honolulu, HI, United States, 10/7/12. https://doi.org/10.1149/05009.0223ecst

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abstract = "Using low-temperature molecular beam epitaxy (LTMBE), we demonstrate high-quality heterointerfaces consisting of CoFe alloys and germanium (Ge) with a good atomic matching at the (111) plane. Electrical properties of the atomically matched CoFe/p-Ge(111) junctions with the area of (S) < ~10 μm2 clearly show the suppression of the Fermi-level pinning (FLP) effect, similar to the features of the atomically matched Fe3Si/p- Ge(111) junctions with S < ~10 μm2 in our previous work. This means that the suppression of FLP is independent on a kind of metals. As a result, we conclude that the formation of the atomically matched metal/Ge interfaces with almost no defects is important to suppress FLP.",

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AU - Kasahara, K.

AU - Yoshioka, H.

AU - Tojo, Y.

AU - Nishimura, T.

AU - Yamada, S.

AU - Miyao, M.

AU - Hamaya, K.

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N2 - Using low-temperature molecular beam epitaxy (LTMBE), we demonstrate high-quality heterointerfaces consisting of CoFe alloys and germanium (Ge) with a good atomic matching at the (111) plane. Electrical properties of the atomically matched CoFe/p-Ge(111) junctions with the area of (S) < ~10 μm2 clearly show the suppression of the Fermi-level pinning (FLP) effect, similar to the features of the atomically matched Fe3Si/p- Ge(111) junctions with S < ~10 μm2 in our previous work. This means that the suppression of FLP is independent on a kind of metals. As a result, we conclude that the formation of the atomically matched metal/Ge interfaces with almost no defects is important to suppress FLP.

AB - Using low-temperature molecular beam epitaxy (LTMBE), we demonstrate high-quality heterointerfaces consisting of CoFe alloys and germanium (Ge) with a good atomic matching at the (111) plane. Electrical properties of the atomically matched CoFe/p-Ge(111) junctions with the area of (S) < ~10 μm2 clearly show the suppression of the Fermi-level pinning (FLP) effect, similar to the features of the atomically matched Fe3Si/p- Ge(111) junctions with S < ~10 μm2 in our previous work. This means that the suppression of FLP is independent on a kind of metals. As a result, we conclude that the formation of the atomically matched metal/Ge interfaces with almost no defects is important to suppress FLP.

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Effect of an atomically matched interface structure on Fermi-level pinning at metal/p-Ge interfaces

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