TY - GEN
T1 - Effect of an atomically matched interface structure on Fermi-level pinning at metal/p-Ge interfaces
AU - Kasahara, K.
AU - Yoshioka, H.
AU - Tojo, Y.
AU - Nishimura, T.
AU - Yamada, S.
AU - Miyao, M.
AU - Hamaya, K.
PY - 2013
Y1 - 2013
N2 - Using low-temperature molecular beam epitaxy (LTMBE), we demonstrate high-quality heterointerfaces consisting of CoFe alloys and germanium (Ge) with a good atomic matching at the (111) plane. Electrical properties of the atomically matched CoFe/p-Ge(111) junctions with the area of (S) < ~10 μm2 clearly show the suppression of the Fermi-level pinning (FLP) effect, similar to the features of the atomically matched Fe3Si/p- Ge(111) junctions with S < ~10 μm2 in our previous work. This means that the suppression of FLP is independent on a kind of metals. As a result, we conclude that the formation of the atomically matched metal/Ge interfaces with almost no defects is important to suppress FLP.
AB - Using low-temperature molecular beam epitaxy (LTMBE), we demonstrate high-quality heterointerfaces consisting of CoFe alloys and germanium (Ge) with a good atomic matching at the (111) plane. Electrical properties of the atomically matched CoFe/p-Ge(111) junctions with the area of (S) < ~10 μm2 clearly show the suppression of the Fermi-level pinning (FLP) effect, similar to the features of the atomically matched Fe3Si/p- Ge(111) junctions with S < ~10 μm2 in our previous work. This means that the suppression of FLP is independent on a kind of metals. As a result, we conclude that the formation of the atomically matched metal/Ge interfaces with almost no defects is important to suppress FLP.
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U2 - 10.1149/05009.0223ecst
DO - 10.1149/05009.0223ecst
M3 - Conference contribution
AN - SCOPUS:84885724281
SN - 9781607683575
T3 - ECS Transactions
SP - 223
EP - 229
BT - SiGe, Ge, and Related Compounds 5
PB - Electrochemical Society Inc.
T2 - 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Y2 - 7 October 2012 through 12 October 2012
ER -