Effect of annealing for AG-IN-S thin films prepared by a vacuum evaporation method

Yoji Akaki, Kyohei Yamashita, Tsuyoshi Yoshitake, Shigeyuki Nakamura, Satoru Seto, Takahiro Tokuda, Kenji Yoshino

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    Ag-In-S thin films deposited by a single-source thermal evaporation method were annealed in H2S atmosphere from 300 to 450 °C for 60 min. after the evaporation. All the films annealed above 300 °C were obtained chalcopyrite AgInS2 crystal phase. The composition ratios of Ag, In and S atoms become close to stoichiometry with increasing the annealing temperature. The grain size of the AgInS2 crystal in the films annealed at 400 °C are approximately 1.5∼4 μm.

    Original languageEnglish
    Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
    Pages2405-2407
    Number of pages3
    DOIs
    Publication statusPublished - Dec 20 2010
    Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
    Duration: Jun 20 2010Jun 25 2010

    Other

    Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
    CountryUnited States
    CityHonolulu, HI
    Period6/20/106/25/10

    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering
    • Control and Systems Engineering
    • Industrial and Manufacturing Engineering

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