Effect of annealing for CuInS2 thin films prepared from Cu-rich ternary compound

Yoji Akaki, Shigeuki Nakamura, Keita Nomoto, Tsuyoshi Yoshitake, Kenji Yoshino

    Research output: Contribution to journalConference article

    11 Citations (Scopus)

    Abstract

    Evaporated CuInS2 films using a single-source were annealed in H2S atmosphere from 250 to 500 °C for 60 min. after the evaporation. Polycrystalline CuInS2 powder grown by a hot-press method was employed as a source material. Cu/In ratios of the source were 1.0, 1.2 and 1.5. All the films annealed above 350 °C were of CuInS2 single phase regardless of the Cu/In ratio of the source material. The films prepared from the source material of the Cu/In ratio of 1.5 became Cu-rich films, which had the Cu/In ratio of 1.37. Carrier concentrations, resistivities and mobilities of the films annealed above 350 °C prepared from the source material of the Cu/In ratio of 1.5 were approximately 1 × 1021 cm-3, 0.1 Ωcm and 0.1 cm2/Vs, respectively, at room temperature. The activation energy of the film annealed at 400 °C was evaluated to be 6.5 meV.

    Original languageEnglish
    Pages (from-to)1030-1033
    Number of pages4
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume6
    Issue number5
    DOIs
    Publication statusPublished - Sep 30 2009
    Event16th International Conference on Ternary and Multinary Compounds, ICTMC16 - Berlin, Germany
    Duration: Sep 15 2008Sep 19 2008

    All Science Journal Classification (ASJC) codes

    • Condensed Matter Physics

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