Evaporated CuInS2 films using a single-source were annealed in H2S atmosphere from 250 to 500 °C for 60 min. after the evaporation. Polycrystalline CuInS2 powder grown by a hot-press method was employed as a source material. Cu/In ratios of the source were 1.0, 1.2 and 1.5. All the films annealed above 350 °C were of CuInS2 single phase regardless of the Cu/In ratio of the source material. The films prepared from the source material of the Cu/In ratio of 1.5 became Cu-rich films, which had the Cu/In ratio of 1.37. Carrier concentrations, resistivities and mobilities of the films annealed above 350 °C prepared from the source material of the Cu/In ratio of 1.5 were approximately 1 × 1021 cm-3, 0.1 Ωcm and 0.1 cm2/Vs, respectively, at room temperature. The activation energy of the film annealed at 400 °C was evaluated to be 6.5 meV.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - Sep 30 2009|
|Event||16th International Conference on Ternary and Multinary Compounds, ICTMC16 - Berlin, Germany|
Duration: Sep 15 2008 → Sep 19 2008
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics