TY - GEN
T1 - Effect of annealing treatment on the performance of organic solar cell
AU - Aziz, Tengku Hasnan Tengku
AU - Salleh, Muhamad Mat
AU - Yahaya, Muhammad
AU - Triyana, K.
AU - Fujita, K.
PY - 2010
Y1 - 2010
N2 - This paper reports the influence of annealing treatment on the performance of organic solar cells. The structure of ITO/PEDOT:PSS/P3HT:PCBM/LiF/Al bulk heterojunction solar cells were fabricated and annealed with three different temperature of 50°C, 100°C and 150deg;C respectively. IV characteristic of the device found that the annealing treatment might optimize the solar cell performance. For optimum device performance, maximum temperature at 100°C give the short-circuit current density (Jsc) of 0.55 mA/cm2 and energy conversion efficiency (℘) ca. 2%. The experimental and the physics behind the improvement will be discussed in this paper.
AB - This paper reports the influence of annealing treatment on the performance of organic solar cells. The structure of ITO/PEDOT:PSS/P3HT:PCBM/LiF/Al bulk heterojunction solar cells were fabricated and annealed with three different temperature of 50°C, 100°C and 150deg;C respectively. IV characteristic of the device found that the annealing treatment might optimize the solar cell performance. For optimum device performance, maximum temperature at 100°C give the short-circuit current density (Jsc) of 0.55 mA/cm2 and energy conversion efficiency (℘) ca. 2%. The experimental and the physics behind the improvement will be discussed in this paper.
UR - http://www.scopus.com/inward/record.url?scp=77957590672&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77957590672&partnerID=8YFLogxK
U2 - 10.1109/SMELEC.2010.5549471
DO - 10.1109/SMELEC.2010.5549471
M3 - Conference contribution
AN - SCOPUS:77957590672
SN - 9781424466092
T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
SP - 45
EP - 47
BT - ICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics
T2 - 2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010
Y2 - 28 June 2010 through 30 June 2010
ER -