Effect of atmosphere on weight loss in sintered silicon carbide during heat treatment

Takayuki Nagano, Kenji Kaneko, Guo Dong Zhan, Mamoru Mitomo

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Heat treatment was performed on β-SiC with different sintering additives in the temperature range 1873-2073 K, in both argon and nitrogen-gas atmospheres. In the case of the specimens heat-treated at 2073 K in argon, the weight loss was more than the total weight of the sintering additives, except for B,C-doped β-SiC. On the other hand, weight loss was suppressed by about one-third to one-half in nitrogen gas. Weight loss depended mainly on the reaction at the interface between the SiC grains and the grain-boundary phase.

Original languageEnglish
Pages (from-to)2781-2787
Number of pages7
JournalJournal of the American Ceramic Society
Volume83
Issue number11
Publication statusPublished - Nov 1 2000
Externally publishedYes

Fingerprint

Sintered carbides
Silicon carbide
Argon
Heat treatment
Nitrogen
Sintering
Gases
Grain boundaries
silicon carbide
Temperature

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Effect of atmosphere on weight loss in sintered silicon carbide during heat treatment. / Nagano, Takayuki; Kaneko, Kenji; Zhan, Guo Dong; Mitomo, Mamoru.

In: Journal of the American Ceramic Society, Vol. 83, No. 11, 01.11.2000, p. 2781-2787.

Research output: Contribution to journalArticle

Nagano, Takayuki ; Kaneko, Kenji ; Zhan, Guo Dong ; Mitomo, Mamoru. / Effect of atmosphere on weight loss in sintered silicon carbide during heat treatment. In: Journal of the American Ceramic Society. 2000 ; Vol. 83, No. 11. pp. 2781-2787.
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