TY - GEN
T1 - Effect of atmosphere temperature on physical properties of ZnO/Ag/ZnO on PET films
AU - Kim, Yun Hae
AU - Lee, Jin Woo
AU - Murakami, Ri Ichi
AU - Lee, Dong Myung
AU - Ha, Jin Cheol
AU - Wang, Pang Pang
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2014
Y1 - 2014
N2 - In-doped indium oxide (ITO) layers on PET substrates are used in filters for plasma displays, low-e windows, solar cells etc. However, ITO is a relatively expensive material because indium is not abundant. ZnO is a wide direct band gap semiconductor that has excellent physical and chemical properties and has been applied to various domains, such as piezoelectrics, semiconductor lasers, etc. Thin-film of this material are improved with respect to physical and electrical properties by heat treatment after manufacturing. This method of film production and heat treatment is time-consuming. In this study, however, by varying the temperature of the atmosphere during the manufacturing process of the films, heat treatment item can be reduced. In addition, characterization of more than 80% of the transmittance and electrical properties were above a certain level.
AB - In-doped indium oxide (ITO) layers on PET substrates are used in filters for plasma displays, low-e windows, solar cells etc. However, ITO is a relatively expensive material because indium is not abundant. ZnO is a wide direct band gap semiconductor that has excellent physical and chemical properties and has been applied to various domains, such as piezoelectrics, semiconductor lasers, etc. Thin-film of this material are improved with respect to physical and electrical properties by heat treatment after manufacturing. This method of film production and heat treatment is time-consuming. In this study, however, by varying the temperature of the atmosphere during the manufacturing process of the films, heat treatment item can be reduced. In addition, characterization of more than 80% of the transmittance and electrical properties were above a certain level.
UR - http://www.scopus.com/inward/record.url?scp=84905654630&partnerID=8YFLogxK
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U2 - 10.4028/www.scientific.net/AMR.988.125
DO - 10.4028/www.scientific.net/AMR.988.125
M3 - Conference contribution
AN - SCOPUS:84905654630
SN - 9783038351740
T3 - Advanced Materials Research
SP - 125
EP - 129
BT - Material, Mechanical and Manufacturing Engineering II
PB - Trans Tech Publications Ltd
T2 - 2nd International Conference on Material, Mechanical and Manufacturing Engineering, IC3ME 2014
Y2 - 30 May 2014 through 31 May 2014
ER -