Effect of atmosphere temperature on physical properties of ZnO/Ag/ZnO on PET films

Yun Hae Kim, Jin Woo Lee, Ri Ichi Murakami, Dong Myung Lee, Jin Cheol Ha, Pang Pang Wang

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    In-doped indium oxide (ITO) layers on PET substrates are used in filters for plasma displays, low-e windows, solar cells etc. However, ITO is a relatively expensive material because indium is not abundant. ZnO is a wide direct band gap semiconductor that has excellent physical and chemical properties and has been applied to various domains, such as piezoelectrics, semiconductor lasers, etc. Thin-film of this material are improved with respect to physical and electrical properties by heat treatment after manufacturing. This method of film production and heat treatment is time-consuming. In this study, however, by varying the temperature of the atmosphere during the manufacturing process of the films, heat treatment item can be reduced. In addition, characterization of more than 80% of the transmittance and electrical properties were above a certain level.

    Original languageEnglish
    Title of host publicationMaterial, Mechanical and Manufacturing Engineering II
    PublisherTrans Tech Publications Ltd
    Pages125-129
    Number of pages5
    ISBN (Print)9783038351740
    DOIs
    Publication statusPublished - 2014
    Event2nd International Conference on Material, Mechanical and Manufacturing Engineering, IC3ME 2014 - Guangzhou, China
    Duration: May 30 2014May 31 2014

    Publication series

    NameAdvanced Materials Research
    Volume988
    ISSN (Print)1022-6680
    ISSN (Electronic)1662-8985

    Other

    Other2nd International Conference on Material, Mechanical and Manufacturing Engineering, IC3ME 2014
    Country/TerritoryChina
    CityGuangzhou
    Period5/30/145/31/14

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

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