Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces

K. Yamane, K. Hamaya, Y. Ando, Y. Enomoto, Keisuke Yamamoto, Taizoh Sadoh, M. Miyao

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Abstract

We study electrical properties of metal/Ge contacts with an atomically controlled interface, and compare them with those with a disordered one, where atomically controlled interfaces can be demonstrated by using Fe3 Si/Ge (111) contacts. We find that the Schottky barrier height of Fe3 Si/n-Ge (111) contacts is unexpectedly lower than those induced by the strong Fermi-level pinning at other metal/n-Ge contacts. For Fe3 Si/p-Ge (111) contacts, we identify clear rectifying behavior in I-V characteristics at low temperatures, which is also different from I-V features due to the strong Fermi-level pinning at other metal/p-Ge contacts. These results indicate that there is an extrinsic contribution such as dangling bonds to the Fermi-level pinning effect at the directly connected metal/Ge contacts.

Original languageEnglish
Article number162104
JournalApplied Physics Letters
Volume96
Issue number16
DOIs
Publication statusPublished - Apr 19 2010

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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