Effect of bias application on c-BN synthesis by induction thermal plasmas under atmospheric pressure

Takayuki Watanabe, Ryoichi Sataka, Kenji Yamamoto

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Synthesis of c-BN was enhanced with DC bias application on the substrate in atmospheric pressure induction plasmas in this study. Previous c-BN synthesis has been performed under reduced pressure using explosive and hazardous gases. For industrial application such as coating on cutting tools, improvement of c-BN synthesis method has been strongly required. Therefore, the purpose of this paper is to investigate the mechanism of enhanced c-BN synthesis with bias application using safe starting material, h-BN and boron powder, under atmospheric pressure. The bias application leads to the optimum B/N ratio as well as the reduction of oxygen impurity in the deposits, resulting in the successful c-BN synthesis under atmospheric pressure. Important process for c-BN formation is attributed to the formation of high density of activated species such as N+, and the quenching process on the substrate. We conclude that bias application is important to increase activated species.

Original languageEnglish
Pages (from-to)4462-4467
Number of pages6
JournalThin Solid Films
Volume516
Issue number13
DOIs
Publication statusPublished - May 1 2008
Externally publishedYes

Fingerprint

Plasma Gases
thermal plasmas
Atmospheric pressure
atmospheric pressure
induction
Plasmas
synthesis
flammable gases
Boron
Substrates
Cutting tools
Powders
Industrial applications
Quenching
boron
Deposits
Gases
direct current
quenching
deposits

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Effect of bias application on c-BN synthesis by induction thermal plasmas under atmospheric pressure. / Watanabe, Takayuki; Sataka, Ryoichi; Yamamoto, Kenji.

In: Thin Solid Films, Vol. 516, No. 13, 01.05.2008, p. 4462-4467.

Research output: Contribution to journalArticle

@article{830f54cdc0b54528b2e704ff81d2b0ef,
title = "Effect of bias application on c-BN synthesis by induction thermal plasmas under atmospheric pressure",
abstract = "Synthesis of c-BN was enhanced with DC bias application on the substrate in atmospheric pressure induction plasmas in this study. Previous c-BN synthesis has been performed under reduced pressure using explosive and hazardous gases. For industrial application such as coating on cutting tools, improvement of c-BN synthesis method has been strongly required. Therefore, the purpose of this paper is to investigate the mechanism of enhanced c-BN synthesis with bias application using safe starting material, h-BN and boron powder, under atmospheric pressure. The bias application leads to the optimum B/N ratio as well as the reduction of oxygen impurity in the deposits, resulting in the successful c-BN synthesis under atmospheric pressure. Important process for c-BN formation is attributed to the formation of high density of activated species such as N+, and the quenching process on the substrate. We conclude that bias application is important to increase activated species.",
author = "Takayuki Watanabe and Ryoichi Sataka and Kenji Yamamoto",
year = "2008",
month = "5",
day = "1",
doi = "10.1016/j.tsf.2007.10.018",
language = "English",
volume = "516",
pages = "4462--4467",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "13",

}

TY - JOUR

T1 - Effect of bias application on c-BN synthesis by induction thermal plasmas under atmospheric pressure

AU - Watanabe, Takayuki

AU - Sataka, Ryoichi

AU - Yamamoto, Kenji

PY - 2008/5/1

Y1 - 2008/5/1

N2 - Synthesis of c-BN was enhanced with DC bias application on the substrate in atmospheric pressure induction plasmas in this study. Previous c-BN synthesis has been performed under reduced pressure using explosive and hazardous gases. For industrial application such as coating on cutting tools, improvement of c-BN synthesis method has been strongly required. Therefore, the purpose of this paper is to investigate the mechanism of enhanced c-BN synthesis with bias application using safe starting material, h-BN and boron powder, under atmospheric pressure. The bias application leads to the optimum B/N ratio as well as the reduction of oxygen impurity in the deposits, resulting in the successful c-BN synthesis under atmospheric pressure. Important process for c-BN formation is attributed to the formation of high density of activated species such as N+, and the quenching process on the substrate. We conclude that bias application is important to increase activated species.

AB - Synthesis of c-BN was enhanced with DC bias application on the substrate in atmospheric pressure induction plasmas in this study. Previous c-BN synthesis has been performed under reduced pressure using explosive and hazardous gases. For industrial application such as coating on cutting tools, improvement of c-BN synthesis method has been strongly required. Therefore, the purpose of this paper is to investigate the mechanism of enhanced c-BN synthesis with bias application using safe starting material, h-BN and boron powder, under atmospheric pressure. The bias application leads to the optimum B/N ratio as well as the reduction of oxygen impurity in the deposits, resulting in the successful c-BN synthesis under atmospheric pressure. Important process for c-BN formation is attributed to the formation of high density of activated species such as N+, and the quenching process on the substrate. We conclude that bias application is important to increase activated species.

UR - http://www.scopus.com/inward/record.url?scp=41549128393&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41549128393&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2007.10.018

DO - 10.1016/j.tsf.2007.10.018

M3 - Article

AN - SCOPUS:41549128393

VL - 516

SP - 4462

EP - 4467

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 13

ER -