Effect of buffer layer on epitaxial growth of YSZ deposited on Si substrate by slower Q-switched 266 nm YAG laser

Satoru Kaneko, Kensuke Akiyama, Yoshitada Shimizu, Takeshi Ito, Shinji Yasaka, Masahiko Mitsuhashi, Seishiro Ohya, Keisuke Saito, Takayuki Watanabe, Shoji Okamoto, Hiroshi Funakubo

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14 Citations (Scopus)

Abstract

Yttria-stabilized zirconia (YSZ) was grown on Si(100) substrate by pulsed laser deposition (PLD). The laser used in this study was a 266 nm YAG laser with a second function generator modulating only the Q-switch while the primary generator modulated the flash lamp (slower Q-switch). Epitaxial growth was verified on YSZ film deposited without oxygen gas followed by primary deposition in oxygen atmosphere on Si substrate with a ∼0.4-nm-thin oxide layer. The crystallinity was strongly dependent on the thickness of the buffer layer deposited prior to the primary deposition of YSZ. The epitaxial growth was confirmed by φ scan, and ω scan (rocking curve) showed the full width at half maximum (FWHM) of 1.1 deg. The required oxygen pressure for epitaxial growth was quite high compared to that of excimer deposition.

Original languageEnglish
Pages (from-to)1532-1535
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number4 A
DOIs
Publication statusPublished - Apr 2004
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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