Effect of controlled crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth

Xin Liu, Xue Feng Han, Satoshi Nakano, Koichi Kakimoto

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In Czochralski silicon (CZ-Si) crystal growth, packed Si chunks experience collapse and volume shrinkage during the melting process. The axial movements of the crucible and the melting of the Si feedstock lead to dynamic thermal and flow fields and affect mass transport. To study the effect of crucible movement on the melting process and carbon (C) contamination, the cases of fixed and lifting crucible were investigated by the transient global simulation with dynamic mesh deformation. The gap width between the gas-guide and the top surface of Si feedstock was kept constant during the crucible lifting process. Impurity and species transport in Si feedstock and argon gas was investigated for the cases with the fixed and lifting crucibles. The comparison of C accumulation processes indicated that the lifting crucible case resulted in higher C contamination than that found in the fixed crucible case. Furthermore, lifting crucible cases with different gap widths were investigated to elaborate strategies for controlling the crucible movement for its effect on the melting process and C contamination in CZ-Si crystal growth. It was observed that the optimum gap width for C reduction results from the trade-off between the back diffusion and gas convection.

Original languageEnglish
Pages (from-to)241-244
Number of pages4
JournalJournal of Crystal Growth
Volume483
DOIs
Publication statusPublished - Feb 1 2018

Fingerprint

Crucibles
Silicon
crucibles
Crystallization
Crystal growth
crystal growth
contamination
Melting
Contamination
Carbon
melting
carbon
silicon
Feedstocks
Gases
gases
Argon
shrinkage
mesh
Flow fields

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Effect of controlled crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth. / Liu, Xin; Han, Xue Feng; Nakano, Satoshi; Kakimoto, Koichi.

In: Journal of Crystal Growth, Vol. 483, 01.02.2018, p. 241-244.

Research output: Contribution to journalArticle

@article{b0ed3d59bb804e22a1f9d6a6c7e3a160,
title = "Effect of controlled crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth",
abstract = "In Czochralski silicon (CZ-Si) crystal growth, packed Si chunks experience collapse and volume shrinkage during the melting process. The axial movements of the crucible and the melting of the Si feedstock lead to dynamic thermal and flow fields and affect mass transport. To study the effect of crucible movement on the melting process and carbon (C) contamination, the cases of fixed and lifting crucible were investigated by the transient global simulation with dynamic mesh deformation. The gap width between the gas-guide and the top surface of Si feedstock was kept constant during the crucible lifting process. Impurity and species transport in Si feedstock and argon gas was investigated for the cases with the fixed and lifting crucibles. The comparison of C accumulation processes indicated that the lifting crucible case resulted in higher C contamination than that found in the fixed crucible case. Furthermore, lifting crucible cases with different gap widths were investigated to elaborate strategies for controlling the crucible movement for its effect on the melting process and C contamination in CZ-Si crystal growth. It was observed that the optimum gap width for C reduction results from the trade-off between the back diffusion and gas convection.",
author = "Xin Liu and Han, {Xue Feng} and Satoshi Nakano and Koichi Kakimoto",
year = "2018",
month = "2",
day = "1",
doi = "10.1016/j.jcrysgro.2017.12.016",
language = "English",
volume = "483",
pages = "241--244",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Effect of controlled crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth

AU - Liu, Xin

AU - Han, Xue Feng

AU - Nakano, Satoshi

AU - Kakimoto, Koichi

PY - 2018/2/1

Y1 - 2018/2/1

N2 - In Czochralski silicon (CZ-Si) crystal growth, packed Si chunks experience collapse and volume shrinkage during the melting process. The axial movements of the crucible and the melting of the Si feedstock lead to dynamic thermal and flow fields and affect mass transport. To study the effect of crucible movement on the melting process and carbon (C) contamination, the cases of fixed and lifting crucible were investigated by the transient global simulation with dynamic mesh deformation. The gap width between the gas-guide and the top surface of Si feedstock was kept constant during the crucible lifting process. Impurity and species transport in Si feedstock and argon gas was investigated for the cases with the fixed and lifting crucibles. The comparison of C accumulation processes indicated that the lifting crucible case resulted in higher C contamination than that found in the fixed crucible case. Furthermore, lifting crucible cases with different gap widths were investigated to elaborate strategies for controlling the crucible movement for its effect on the melting process and C contamination in CZ-Si crystal growth. It was observed that the optimum gap width for C reduction results from the trade-off between the back diffusion and gas convection.

AB - In Czochralski silicon (CZ-Si) crystal growth, packed Si chunks experience collapse and volume shrinkage during the melting process. The axial movements of the crucible and the melting of the Si feedstock lead to dynamic thermal and flow fields and affect mass transport. To study the effect of crucible movement on the melting process and carbon (C) contamination, the cases of fixed and lifting crucible were investigated by the transient global simulation with dynamic mesh deformation. The gap width between the gas-guide and the top surface of Si feedstock was kept constant during the crucible lifting process. Impurity and species transport in Si feedstock and argon gas was investigated for the cases with the fixed and lifting crucibles. The comparison of C accumulation processes indicated that the lifting crucible case resulted in higher C contamination than that found in the fixed crucible case. Furthermore, lifting crucible cases with different gap widths were investigated to elaborate strategies for controlling the crucible movement for its effect on the melting process and C contamination in CZ-Si crystal growth. It was observed that the optimum gap width for C reduction results from the trade-off between the back diffusion and gas convection.

UR - http://www.scopus.com/inward/record.url?scp=85038015129&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85038015129&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2017.12.016

DO - 10.1016/j.jcrysgro.2017.12.016

M3 - Article

VL - 483

SP - 241

EP - 244

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -