Effect of cooling rate on the activation of slip systems in seed cast-grown monocrystalline silicon in the [001] and [111] directions

B. Gao, S. Nakano, H. Harada, Y. Miyamura, Koichi Kakimoto

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

To effectively reduce dislocation by controlling the cooling process, the effect of cooling rate on the activation of slip systems was studied in seed cast-grown monocrystalline silicon in the [001] and [111] growth directions. The results show that the cooling rate has a large effect on the activation of slip systems. In the [001] growth direction, a slow cooling rate either weakly activates 4-fold symmetric slip systems or does not activate them at all. In contrast, a fast cooling rate strongly activates the 4-fold symmetric slip systems. In the [111] growth direction, a slow cooling rate weakly activates the three 3-fold symmetric slip systems, while a fast cooling rate strongly activates the three 3-fold symmetric slip systems. The differences of the activation of the slip systems between the slow and fast cooling rates mainly cause differences in dislocation and residual stress. Irrespective of the crystal growth direction, it is mainly the radial flux that causes the difference between the fast and slow cooling rates. Therefore, the most effective method for reducing dislocation during the cooling process is to decrease the radial flux.

Original languageEnglish
Pages (from-to)2661-2669
Number of pages9
JournalCrystal Growth and Design
Volume13
Issue number6
DOIs
Publication statusPublished - Jun 5 2013

Fingerprint

Monocrystalline silicon
Seed
casts
seeds
slip
Chemical activation
activation
Cooling
cooling
silicon
Direction compound
Fluxes
causes
Crystallization
Dislocations (crystals)
Crystal growth
residual stress
crystal growth
Residual stresses

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Effect of cooling rate on the activation of slip systems in seed cast-grown monocrystalline silicon in the [001] and [111] directions. / Gao, B.; Nakano, S.; Harada, H.; Miyamura, Y.; Kakimoto, Koichi.

In: Crystal Growth and Design, Vol. 13, No. 6, 05.06.2013, p. 2661-2669.

Research output: Contribution to journalArticle

@article{bd447fb2bf9248ac99c03e40f2d0a1ef,
title = "Effect of cooling rate on the activation of slip systems in seed cast-grown monocrystalline silicon in the [001] and [111] directions",
abstract = "To effectively reduce dislocation by controlling the cooling process, the effect of cooling rate on the activation of slip systems was studied in seed cast-grown monocrystalline silicon in the [001] and [111] growth directions. The results show that the cooling rate has a large effect on the activation of slip systems. In the [001] growth direction, a slow cooling rate either weakly activates 4-fold symmetric slip systems or does not activate them at all. In contrast, a fast cooling rate strongly activates the 4-fold symmetric slip systems. In the [111] growth direction, a slow cooling rate weakly activates the three 3-fold symmetric slip systems, while a fast cooling rate strongly activates the three 3-fold symmetric slip systems. The differences of the activation of the slip systems between the slow and fast cooling rates mainly cause differences in dislocation and residual stress. Irrespective of the crystal growth direction, it is mainly the radial flux that causes the difference between the fast and slow cooling rates. Therefore, the most effective method for reducing dislocation during the cooling process is to decrease the radial flux.",
author = "B. Gao and S. Nakano and H. Harada and Y. Miyamura and Koichi Kakimoto",
year = "2013",
month = "6",
day = "5",
doi = "10.1021/cg400428z",
language = "English",
volume = "13",
pages = "2661--2669",
journal = "Crystal Growth and Design",
issn = "1528-7483",
publisher = "American Chemical Society",
number = "6",

}

TY - JOUR

T1 - Effect of cooling rate on the activation of slip systems in seed cast-grown monocrystalline silicon in the [001] and [111] directions

AU - Gao, B.

AU - Nakano, S.

AU - Harada, H.

AU - Miyamura, Y.

AU - Kakimoto, Koichi

PY - 2013/6/5

Y1 - 2013/6/5

N2 - To effectively reduce dislocation by controlling the cooling process, the effect of cooling rate on the activation of slip systems was studied in seed cast-grown monocrystalline silicon in the [001] and [111] growth directions. The results show that the cooling rate has a large effect on the activation of slip systems. In the [001] growth direction, a slow cooling rate either weakly activates 4-fold symmetric slip systems or does not activate them at all. In contrast, a fast cooling rate strongly activates the 4-fold symmetric slip systems. In the [111] growth direction, a slow cooling rate weakly activates the three 3-fold symmetric slip systems, while a fast cooling rate strongly activates the three 3-fold symmetric slip systems. The differences of the activation of the slip systems between the slow and fast cooling rates mainly cause differences in dislocation and residual stress. Irrespective of the crystal growth direction, it is mainly the radial flux that causes the difference between the fast and slow cooling rates. Therefore, the most effective method for reducing dislocation during the cooling process is to decrease the radial flux.

AB - To effectively reduce dislocation by controlling the cooling process, the effect of cooling rate on the activation of slip systems was studied in seed cast-grown monocrystalline silicon in the [001] and [111] growth directions. The results show that the cooling rate has a large effect on the activation of slip systems. In the [001] growth direction, a slow cooling rate either weakly activates 4-fold symmetric slip systems or does not activate them at all. In contrast, a fast cooling rate strongly activates the 4-fold symmetric slip systems. In the [111] growth direction, a slow cooling rate weakly activates the three 3-fold symmetric slip systems, while a fast cooling rate strongly activates the three 3-fold symmetric slip systems. The differences of the activation of the slip systems between the slow and fast cooling rates mainly cause differences in dislocation and residual stress. Irrespective of the crystal growth direction, it is mainly the radial flux that causes the difference between the fast and slow cooling rates. Therefore, the most effective method for reducing dislocation during the cooling process is to decrease the radial flux.

UR - http://www.scopus.com/inward/record.url?scp=84878648035&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878648035&partnerID=8YFLogxK

U2 - 10.1021/cg400428z

DO - 10.1021/cg400428z

M3 - Article

AN - SCOPUS:84878648035

VL - 13

SP - 2661

EP - 2669

JO - Crystal Growth and Design

JF - Crystal Growth and Design

SN - 1528-7483

IS - 6

ER -