Effect of crucible rotation on oxygen concentration during unidirectional solidification process of multicrystalline silicon for solar cells

Hitoshi Matsuo, R. Bairava Ganesh, Satoshi Nakano, Lijun Liu, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, Koichi Kakimoto

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We studied the effects of crucible rotation on distribution of oxygen concentration in a crystal during the unidirectionally solidification process of multicrystalline silicon for solar cells. Oxygen concentration in the melt increased when crucible rotation rate was increased. Oxygen concentration in the silicon crystal was distributed inhomogeneously in the radial direction when crucible rotation rate was increased. This is due to suppression of oxygen transport. Consequently, less oxygen was transported from the crucible wall to the center of the melt. We found that oxygen concentration is small in the whole ingot and homogenized in the radial direction when crucible rotation rate during the solidification process is set to 1 rpm.

Original languageEnglish
Pages (from-to)1123-1128
Number of pages6
JournalJournal of Crystal Growth
Volume311
Issue number4
DOIs
Publication statusPublished - Feb 1 2009

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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