Effect of crucible rotation on oxygen concentration in the polycrystalline silicon grown by the unidirectional solidification method

S. Nakano, L. J. Liu, X. J. Chen, H. Matsuo, K. Kakimoto

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We investigated the influence of crucible rotation on oxygen concentration in the melt using numerical analysis in the unidirectional solidification process for solar cells. The results showed that oxygen concentration in the melt using crucible rotation is higher than that without using crucible rotation. The reason is that the magnitude of decrease in the flux of oxygen evaporation from the top of the melt is larger than that of oxygen dissolution from the crucible wall to the melt in the case of high crucible rotation rate.

Original languageEnglish
Pages (from-to)1051-1055
Number of pages5
JournalJournal of Crystal Growth
Volume311
Issue number4
DOIs
Publication statusPublished - Feb 1 2009

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Crucibles
crucibles
Polysilicon
solidification
Solidification
Oxygen
silicon
oxygen
numerical analysis
Numerical analysis
Solar cells
dissolving
Dissolution
Evaporation
solar cells
evaporation
Fluxes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Effect of crucible rotation on oxygen concentration in the polycrystalline silicon grown by the unidirectional solidification method. / Nakano, S.; Liu, L. J.; Chen, X. J.; Matsuo, H.; Kakimoto, K.

In: Journal of Crystal Growth, Vol. 311, No. 4, 01.02.2009, p. 1051-1055.

Research output: Contribution to journalArticle

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AU - Kakimoto, K.

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