Effect of crucible thermal conductivity on dislocation distribution in crystals in a silicon carbide physical vapor transport furnace

Kazuma Miyazaki, Satoshi Nakano, Shin ichi Nishizawa, Koichi Kakimoto

Research output: Contribution to journalArticlepeer-review

Abstract

The effect of the thermal conductivity of a crucible in a silicon carbide physical vapor transport furnace on the dislocation distribution in crystal was investigated using numerical analysis. The numerical analysis includes stress and dislocation propagation calculations based on the Alexander–Haasen model. Modifying the thermal conductivity of the carbon crucible can reduce the dislocation density. It can also homogenize the temperature distribution in the radial distribution in the crystal. The density of dislocations could be further by reduced using a carbon crucible with low thermal conductivity.

Original languageEnglish
Article number126981
JournalJournal of Crystal Growth
Volume603
DOIs
Publication statusPublished - Feb 1 2023
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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