Effect of energy transport with recoil atoms on deposited energy distribution in silicon irradiated with energetic ions

Dong Ju Bai, Akiyoshi Baba, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Hiroshi Mori, Toshio Tsurushima

Research output: Contribution to journalArticle

Abstract

Contribution of recoil atoms to the spatial distribution of total energy deposited by ions impinging in silicon is evaluated for 10-250 keV B and Ar ions. The calculated results are compared with the damaged layer thickness obtained by the ion-bombardment-enhanced selective etching, and the effect of energy transport with recoil atoms (recoil atom effect) on deposited energy distributions is discussed.

Original languageEnglish
Pages (from-to)219-223
Number of pages5
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Volume2
Issue number2
Publication statusPublished - Sep 1 1997

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Silicon
Atoms
Ions
Ion bombardment
Spatial distribution
Etching

All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Electrical and Electronic Engineering

Cite this

Effect of energy transport with recoil atoms on deposited energy distribution in silicon irradiated with energetic ions. / Bai, Dong Ju; Baba, Akiyoshi; Kenjo, Atsushi; Sadoh, Taizoh; Nakashima, Hiroshi; Mori, Hiroshi; Tsurushima, Toshio.

In: Research Reports on Information Science and Electrical Engineering of Kyushu University, Vol. 2, No. 2, 01.09.1997, p. 219-223.

Research output: Contribution to journalArticle

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