Effect of Fe/Si ratio on epitaxial growth of Fe3Si on Ge substrate

M. Kumano, Y. Ando, K. Ueda, Taizoh Sadoh, K. Narumi, Y. Maeda, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of the Fe/Si ratios on molecular beam epitaxy (MBE) of Fe 3Si on Ge substrate have been investigated in a wide range of growth temperatures (60-300°C), From XRD measurements, it was found that Fe 3Si layers were epitaxially grown on Ge(111) substrates at 60-200°C under the stoichiometric (Fe/Si ratio of Fe:Si=3:1) and non-stoichiometric (Fe/Si ratio of Fe:Si=4:1) conditions. From RBS measurement, it was found that atomic mixing of Fe and Ge at Fe3Si/Ge interfaces began at a growth temperature of 300°C. In the case of MBE under the stoichiometric condition (Fe:Si=3:1), the crystallinity of Fe3Si is significantly improved compared to the non-stoichiometric condition (Fe:Si=4:1). As a result, very low χmin was obtained in a wide temperature (60-200°C) under the stoichiometric condition. From the transmission electron microscopy measurements, it was shown that high-quality DO3-type Fe3Si/Ge structures with atomically flat interfaces were realized at a low temperature (∼200°C) under the stoichiometric condition.

Original languageEnglish
Title of host publicationECS Transactions - 5th International Symposium on ULSI Process Integration
Pages481-485
Number of pages5
Volume11
Edition6
DOIs
Publication statusPublished - 2007
Event5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States
Duration: Oct 7 2007Oct 12 2007

Other

Other5th International Symposium on ULSI Process Integration - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period10/7/0710/12/07

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Epitaxial growth
Growth temperature
Molecular beam epitaxy
Substrates
Transmission electron microscopy
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kumano, M., Ando, Y., Ueda, K., Sadoh, T., Narumi, K., Maeda, Y., & Miyao, M. (2007). Effect of Fe/Si ratio on epitaxial growth of Fe3Si on Ge substrate. In ECS Transactions - 5th International Symposium on ULSI Process Integration (6 ed., Vol. 11, pp. 481-485) https://doi.org/10.1149/1.2778405

Effect of Fe/Si ratio on epitaxial growth of Fe3Si on Ge substrate. / Kumano, M.; Ando, Y.; Ueda, K.; Sadoh, Taizoh; Narumi, K.; Maeda, Y.; Miyao, M.

ECS Transactions - 5th International Symposium on ULSI Process Integration. Vol. 11 6. ed. 2007. p. 481-485.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kumano, M, Ando, Y, Ueda, K, Sadoh, T, Narumi, K, Maeda, Y & Miyao, M 2007, Effect of Fe/Si ratio on epitaxial growth of Fe3Si on Ge substrate. in ECS Transactions - 5th International Symposium on ULSI Process Integration. 6 edn, vol. 11, pp. 481-485, 5th International Symposium on ULSI Process Integration - 212th ECS Meeting, Washington, DC, United States, 10/7/07. https://doi.org/10.1149/1.2778405
Kumano M, Ando Y, Ueda K, Sadoh T, Narumi K, Maeda Y et al. Effect of Fe/Si ratio on epitaxial growth of Fe3Si on Ge substrate. In ECS Transactions - 5th International Symposium on ULSI Process Integration. 6 ed. Vol. 11. 2007. p. 481-485 https://doi.org/10.1149/1.2778405
Kumano, M. ; Ando, Y. ; Ueda, K. ; Sadoh, Taizoh ; Narumi, K. ; Maeda, Y. ; Miyao, M. / Effect of Fe/Si ratio on epitaxial growth of Fe3Si on Ge substrate. ECS Transactions - 5th International Symposium on ULSI Process Integration. Vol. 11 6. ed. 2007. pp. 481-485
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