Effect of Fe/Si ratio on epitaxial growth of Fe3Si on Ge substrate

M. Kumano, Y. Ando, K. Ueda, T. Sadoh, K. Narumi, Y. Maeda, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of the Fe/Si ratios on molecular beam epitaxy (MBE) of Fe 3Si on Ge substrate have been investigated in a wide range of growth temperatures (60-300°C), From XRD measurements, it was found that Fe 3Si layers were epitaxially grown on Ge(111) substrates at 60-200°C under the stoichiometric (Fe/Si ratio of Fe:Si=3:1) and non-stoichiometric (Fe/Si ratio of Fe:Si=4:1) conditions. From RBS measurement, it was found that atomic mixing of Fe and Ge at Fe3Si/Ge interfaces began at a growth temperature of 300°C. In the case of MBE under the stoichiometric condition (Fe:Si=3:1), the crystallinity of Fe3Si is significantly improved compared to the non-stoichiometric condition (Fe:Si=4:1). As a result, very low χmin was obtained in a wide temperature (60-200°C) under the stoichiometric condition. From the transmission electron microscopy measurements, it was shown that high-quality DO3-type Fe3Si/Ge structures with atomically flat interfaces were realized at a low temperature (∼200°C) under the stoichiometric condition.

Original languageEnglish
Title of host publicationECS Transactions - 5th International Symposium on ULSI Process Integration
Pages481-485
Number of pages5
Edition6
DOIs
Publication statusPublished - Dec 1 2007
Event5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States
Duration: Oct 7 2007Oct 12 2007

Publication series

NameECS Transactions
Number6
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on ULSI Process Integration - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period10/7/0710/12/07

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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