Effect of foreign metal doping on the gas sensing behaviors of SnO 2-based gas sensor

Koichi Suematsu, Takanori Honda, Masayoshi Yuasa, Tetsuya Kida, Kengo Shimanoe, Noboru Yamazoe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Recently, we have proposed some theoretical models, power laws and effect of particle shape and size, for semiconductor gas sensors. The models show that a depletion theory of semiconductor can be combined with the dynamics of adsorption and/or reactions of gases on the surface. In the case of SnO 2, the relative resistance (R/R0) is proportional to PO2 n, where n is a constant value (n=1/2) on oxygen partial pressure. In addition, carrier concentration in SnO2 influences depth of the depletion. In this study, to experimentally reveal such effects, we tried to control the carrier concentration in SnO2 by foreign doping and examined their electrical resistance and sensor response. Correlations between doping concentration, crystalline size, and partial pressures of oxygen and H2 on the electric resistance are discussed to reveal the material design for semiconductor gas sensors.

Original languageEnglish
Title of host publicationMulti-functional Materials and Structures - International Conference on Multifunctional Materials and Structures
PublisherTrans Tech Publications
Pages1502-1505
Number of pages4
ISBN (Print)0878493786, 9780878493784
Publication statusPublished - Jan 1 2008
EventMulti-functional Materials and Structures - International Conference on Multifunctional Materials and Structures - Hong Kong, P.R., China
Duration: Jul 28 2008Jul 31 2008

Publication series

NameAdvanced Materials Research
Volume47-50 PART 2
ISSN (Print)1022-6680

Other

OtherMulti-functional Materials and Structures - International Conference on Multifunctional Materials and Structures
CountryChina
CityHong Kong, P.R.
Period7/28/087/31/08

Fingerprint

Chemical sensors
Doping (additives)
Semiconductor materials
Partial pressure
Carrier concentration
Metals
Gases
Oxygen
Acoustic impedance
Crystalline materials
Adsorption
Sensors

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Suematsu, K., Honda, T., Yuasa, M., Kida, T., Shimanoe, K., & Yamazoe, N. (2008). Effect of foreign metal doping on the gas sensing behaviors of SnO 2-based gas sensor. In Multi-functional Materials and Structures - International Conference on Multifunctional Materials and Structures (pp. 1502-1505). (Advanced Materials Research; Vol. 47-50 PART 2). Trans Tech Publications.

Effect of foreign metal doping on the gas sensing behaviors of SnO 2-based gas sensor. / Suematsu, Koichi; Honda, Takanori; Yuasa, Masayoshi; Kida, Tetsuya; Shimanoe, Kengo; Yamazoe, Noboru.

Multi-functional Materials and Structures - International Conference on Multifunctional Materials and Structures. Trans Tech Publications, 2008. p. 1502-1505 (Advanced Materials Research; Vol. 47-50 PART 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Suematsu, K, Honda, T, Yuasa, M, Kida, T, Shimanoe, K & Yamazoe, N 2008, Effect of foreign metal doping on the gas sensing behaviors of SnO 2-based gas sensor. in Multi-functional Materials and Structures - International Conference on Multifunctional Materials and Structures. Advanced Materials Research, vol. 47-50 PART 2, Trans Tech Publications, pp. 1502-1505, Multi-functional Materials and Structures - International Conference on Multifunctional Materials and Structures, Hong Kong, P.R., China, 7/28/08.
Suematsu K, Honda T, Yuasa M, Kida T, Shimanoe K, Yamazoe N. Effect of foreign metal doping on the gas sensing behaviors of SnO 2-based gas sensor. In Multi-functional Materials and Structures - International Conference on Multifunctional Materials and Structures. Trans Tech Publications. 2008. p. 1502-1505. (Advanced Materials Research).
Suematsu, Koichi ; Honda, Takanori ; Yuasa, Masayoshi ; Kida, Tetsuya ; Shimanoe, Kengo ; Yamazoe, Noboru. / Effect of foreign metal doping on the gas sensing behaviors of SnO 2-based gas sensor. Multi-functional Materials and Structures - International Conference on Multifunctional Materials and Structures. Trans Tech Publications, 2008. pp. 1502-1505 (Advanced Materials Research).
@inproceedings{f4e09724b42047598af96f47bfb5759c,
title = "Effect of foreign metal doping on the gas sensing behaviors of SnO 2-based gas sensor",
abstract = "Recently, we have proposed some theoretical models, power laws and effect of particle shape and size, for semiconductor gas sensors. The models show that a depletion theory of semiconductor can be combined with the dynamics of adsorption and/or reactions of gases on the surface. In the case of SnO 2, the relative resistance (R/R0) is proportional to PO2 n, where n is a constant value (n=1/2) on oxygen partial pressure. In addition, carrier concentration in SnO2 influences depth of the depletion. In this study, to experimentally reveal such effects, we tried to control the carrier concentration in SnO2 by foreign doping and examined their electrical resistance and sensor response. Correlations between doping concentration, crystalline size, and partial pressures of oxygen and H2 on the electric resistance are discussed to reveal the material design for semiconductor gas sensors.",
author = "Koichi Suematsu and Takanori Honda and Masayoshi Yuasa and Tetsuya Kida and Kengo Shimanoe and Noboru Yamazoe",
year = "2008",
month = "1",
day = "1",
language = "English",
isbn = "0878493786",
series = "Advanced Materials Research",
publisher = "Trans Tech Publications",
pages = "1502--1505",
booktitle = "Multi-functional Materials and Structures - International Conference on Multifunctional Materials and Structures",
address = "Germany",

}

TY - GEN

T1 - Effect of foreign metal doping on the gas sensing behaviors of SnO 2-based gas sensor

AU - Suematsu, Koichi

AU - Honda, Takanori

AU - Yuasa, Masayoshi

AU - Kida, Tetsuya

AU - Shimanoe, Kengo

AU - Yamazoe, Noboru

PY - 2008/1/1

Y1 - 2008/1/1

N2 - Recently, we have proposed some theoretical models, power laws and effect of particle shape and size, for semiconductor gas sensors. The models show that a depletion theory of semiconductor can be combined with the dynamics of adsorption and/or reactions of gases on the surface. In the case of SnO 2, the relative resistance (R/R0) is proportional to PO2 n, where n is a constant value (n=1/2) on oxygen partial pressure. In addition, carrier concentration in SnO2 influences depth of the depletion. In this study, to experimentally reveal such effects, we tried to control the carrier concentration in SnO2 by foreign doping and examined their electrical resistance and sensor response. Correlations between doping concentration, crystalline size, and partial pressures of oxygen and H2 on the electric resistance are discussed to reveal the material design for semiconductor gas sensors.

AB - Recently, we have proposed some theoretical models, power laws and effect of particle shape and size, for semiconductor gas sensors. The models show that a depletion theory of semiconductor can be combined with the dynamics of adsorption and/or reactions of gases on the surface. In the case of SnO 2, the relative resistance (R/R0) is proportional to PO2 n, where n is a constant value (n=1/2) on oxygen partial pressure. In addition, carrier concentration in SnO2 influences depth of the depletion. In this study, to experimentally reveal such effects, we tried to control the carrier concentration in SnO2 by foreign doping and examined their electrical resistance and sensor response. Correlations between doping concentration, crystalline size, and partial pressures of oxygen and H2 on the electric resistance are discussed to reveal the material design for semiconductor gas sensors.

UR - http://www.scopus.com/inward/record.url?scp=56349104834&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=56349104834&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0878493786

SN - 9780878493784

T3 - Advanced Materials Research

SP - 1502

EP - 1505

BT - Multi-functional Materials and Structures - International Conference on Multifunctional Materials and Structures

PB - Trans Tech Publications

ER -