TY - GEN
T1 - Effect of free carrier accumulation or depletion on zone-center vibrational mode in Ge
AU - Kabuyanagi, Shoichi
AU - Nishimura, Tomonori
AU - Yajima, Takeaki
AU - Toriumi, Akira
N1 - Publisher Copyright:
© 2015 JSAP.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2015/9/24
Y1 - 2015/9/24
N2 - Heavy impurity doping is known to soften the lattice system in Si and Ge, experimentally [1, 2]. Although it is theoretically explained by the Fano-type electron-phonon interaction [3], it is practically important as well whether this effect may come from heavy impurity doping or high carrier density in semiconductors. Moreover, it may become more important in nano-devices, because the whole channel will be either in volume inversion or volume accumulation. It is, however, difficult to experimentally distinguish free carrier effects from dopant atom ones in heavily doped semiconductors. Then, the objective of this work is to clarify which plays a more significant role, by studying electron-phonon interactions in lightly doped (carrier accumulation) as well as in heavily doped Ge (carrier depletion), experimentally.
AB - Heavy impurity doping is known to soften the lattice system in Si and Ge, experimentally [1, 2]. Although it is theoretically explained by the Fano-type electron-phonon interaction [3], it is practically important as well whether this effect may come from heavy impurity doping or high carrier density in semiconductors. Moreover, it may become more important in nano-devices, because the whole channel will be either in volume inversion or volume accumulation. It is, however, difficult to experimentally distinguish free carrier effects from dopant atom ones in heavily doped semiconductors. Then, the objective of this work is to clarify which plays a more significant role, by studying electron-phonon interactions in lightly doped (carrier accumulation) as well as in heavily doped Ge (carrier depletion), experimentally.
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M3 - Conference contribution
AN - SCOPUS:84962226229
T3 - 2015 Silicon Nanoelectronics Workshop, SNW 2015
BT - 2015 Silicon Nanoelectronics Workshop, SNW 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Silicon Nanoelectronics Workshop, SNW 2015
Y2 - 14 June 2015 through 15 June 2015
ER -