Effect of free carrier accumulation or depletion on zone-center vibrational mode in Ge

Shoichi Kabuyanagi, Tomonori Nishimura, Takeaki Yajima, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Heavy impurity doping is known to soften the lattice system in Si and Ge, experimentally [1, 2]. Although it is theoretically explained by the Fano-type electron-phonon interaction [3], it is practically important as well whether this effect may come from heavy impurity doping or high carrier density in semiconductors. Moreover, it may become more important in nano-devices, because the whole channel will be either in volume inversion or volume accumulation. It is, however, difficult to experimentally distinguish free carrier effects from dopant atom ones in heavily doped semiconductors. Then, the objective of this work is to clarify which plays a more significant role, by studying electron-phonon interactions in lightly doped (carrier accumulation) as well as in heavily doped Ge (carrier depletion), experimentally.

Original languageEnglish
Title of host publication2015 Silicon Nanoelectronics Workshop, SNW 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863485389
Publication statusPublished - Sep 24 2015
Externally publishedYes
EventSilicon Nanoelectronics Workshop, SNW 2015 - Kyoto, Japan
Duration: Jun 14 2015Jun 15 2015

Publication series

Name2015 Silicon Nanoelectronics Workshop, SNW 2015

Conference

ConferenceSilicon Nanoelectronics Workshop, SNW 2015
CountryJapan
CityKyoto
Period6/14/156/15/15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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