Effect of heat transfer on macroscopic and microscopic crystal quality in silicon carbide sublimation growth

Shin ichi Nishizawa, Tomohisa Kato, Kazuo Arai

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Numerical simulation was applied to observe the phenomena inside a crucible in silicon carbide (SiC) sublimation growth. Numerical simulation results show that crystal quality as well as crystal shape strongly depends on the temperature distribution inside the crucible. Numerical simulation also suggested that it is important to reduce the residual stress in the crystal in order to avoid the generation of dislocations. From these results, SiC sublimation growth was controlled actively, and large and high quality SiC single crystal was grown.

Original languageEnglish
Pages (from-to)342-344
Number of pages3
JournalJournal of Crystal Growth
Volume303
Issue number1 SPEC. ISS.
DOIs
Publication statusPublished - May 1 2007

Fingerprint

Sublimation
sublimation
Silicon carbide
silicon carbides
heat transfer
Crucibles
crucibles
Heat transfer
Crystals
Computer simulation
crystals
simulation
Dislocations (crystals)
residual stress
Residual stresses
Temperature distribution
temperature distribution
Single crystals
single crystals
silicon carbide

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Effect of heat transfer on macroscopic and microscopic crystal quality in silicon carbide sublimation growth. / Nishizawa, Shin ichi; Kato, Tomohisa; Arai, Kazuo.

In: Journal of Crystal Growth, Vol. 303, No. 1 SPEC. ISS., 01.05.2007, p. 342-344.

Research output: Contribution to journalArticle

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