Effect of high pressure torsion on crystal orientation to improve the thermoelectric property of a Bi2Te3-based thermoelectric semiconductor

Maki Ashida, Takashi Hamachiyo, Kazuhiro Hasezaki, Hirotaka Matsunoshita, Zenji Horita

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    A Bi2Te3-based thermoelectric semiconductor was subjected by high pressure torsion (HPT). Sample disks of p-type Bi 0.5Sb1.5Te3.0 were cut from sintered compacts that were made by mechanically alloying (MA) followed by hot pressing. Disks were subjected by HPT with 1, 5 and 10 turns at 473 K under 6.0 GPa of pressure. Crystal orientation was investigated by X-ray diffraction. Microstructures were characterized using scanning electron microscopy. Results indicated that HPT disks after 5 turns had a preferred orientation and a fine grain compared with pre-HPT disks while the orientation factor was decreased after HPT using 10 turns. The power factor had a maximum value at 5 turns as determined by measuring its thermoelectric properties. A maximum power factor of 4.30×10-3 Wm-1K-2 was obtained for HPT disks after 5 turns. This value was larger than that for the pre-HPT disk. The over-HPT of 10 turns was found to have caused a decrease in the preferred orientation leading to a low power factor.

    Original languageEnglish
    Title of host publicationTHERMEC 2009 Supplement
    Pages41-46
    Number of pages6
    DOIs
    Publication statusPublished - Feb 8 2010
    Event6th International Conference on Processing and Manufacturing of Advanced Materials - THERMEC'2009 - Berlin, Germany
    Duration: Aug 25 2009Aug 29 2009

    Publication series

    NameAdvanced Materials Research
    Volume89-91
    ISSN (Print)1022-6680

    Other

    Other6th International Conference on Processing and Manufacturing of Advanced Materials - THERMEC'2009
    Country/TerritoryGermany
    CityBerlin
    Period8/25/098/29/09

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

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