Effect of high-temperature oxidation on the buried oxide integrity in low-dose SIMOX wafers

M. Saito, J. Jablonski, Y. Miyamura, T. Katayama

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

An optimum dose range (ODR) is necessary to synthesize the perfect buried oxide (BOX) layer beneath the surface of silicon wafers through low-dose oxygen implantation and subsequent high-temperature annealing (HTA). A high temperature oxidation (ITOX) process has been developed which can improve the integrity of the BOX grown within the ODR. The density of the Si pipes can be reduced during ITOX by a factor of 35. The annihilation of Si pipes during high temperature oxidation suggests that the perfect BOX can be synthesized during HTA and ITOX thermal treatment even in the wafers implanted to doses under the lower limit of ODR. The SIMOX wafers used were prepared by oxygen implantation to various doses at 180 keV into Si wafers.

Original languageEnglish
Pages154-155
Number of pages2
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 IEEE International SOI Conference - Sanibel Island, FL, USA
Duration: Sep 30 1996Oct 3 1996

Conference

ConferenceProceedings of the 1996 IEEE International SOI Conference
CitySanibel Island, FL, USA
Period9/30/9610/3/96

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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