Effect of H2S annealing on Ag-rich Ag-In-S thin films prepared by vacuum evaporation

Yoji Akaki, Kyohei Yamashita, Tsuyoshi Yoshitake, Shigeuki Nakamura, Takahiro Tokuda, Kenji Yoshino

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    We investigated the effect of H2S annealing on Ag-In-S thin films prepared by vacuum evaporation. In thin films annealed above 350 °C, diffraction peaks except chalcopyrite AgInS2 phase were not observed for a starting material ratio of 1.0 but observed for that of 1.2. Thin films annealed at 400 °C with a starting material ratio of 1.5 contained several phases. We found that the Ag/In ratios of the films could be controlled by changing the starting material ratio. Grains of films with composition ratios of 1.0 and 1.2 were nonuniform, whereas those with a composition ratio of 1.5 were uniform.

    Original languageEnglish
    Article number05FB06
    JournalJapanese journal of applied physics
    Volume50
    Issue number5 PART 3
    DOIs
    Publication statusPublished - May 1 2011

    Fingerprint

    Vacuum evaporation
    evaporation
    Annealing
    Thin films
    vacuum
    annealing
    thin films
    Chemical analysis
    Diffraction
    diffraction

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Effect of H2S annealing on Ag-rich Ag-In-S thin films prepared by vacuum evaporation. / Akaki, Yoji; Yamashita, Kyohei; Yoshitake, Tsuyoshi; Nakamura, Shigeuki; Tokuda, Takahiro; Yoshino, Kenji.

    In: Japanese journal of applied physics, Vol. 50, No. 5 PART 3, 05FB06, 01.05.2011.

    Research output: Contribution to journalArticle

    Akaki, Yoji ; Yamashita, Kyohei ; Yoshitake, Tsuyoshi ; Nakamura, Shigeuki ; Tokuda, Takahiro ; Yoshino, Kenji. / Effect of H2S annealing on Ag-rich Ag-In-S thin films prepared by vacuum evaporation. In: Japanese journal of applied physics. 2011 ; Vol. 50, No. 5 PART 3.
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    AU - Tokuda, Takahiro

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