Effect of Hydrogen Ion Energy in the Process of Reactive Ion Etching of Sn Thin Films by Hydrogen Plasmas

Mengran Ji, Ryo Nagata, Kiichiro Uchino

Research output: Contribution to journalArticlepeer-review

Abstract

One of the problems in extreme ultraviolet (EUV) lithography is the deterioration in the reflectivity of the EUV mirror owing to the deposition of tin (Sn) debris. Such Sn adhesion films can be etched by hydrogen ions and atoms through a chemical reaction, forming a volatile SnH4 gas. In this study, the dependence of the hydrogen ion energy on the Sn etching was investigated. Samples covered by Sn thin films and with various applied bias voltages were exposed to hydrogen plasmas. The etched thicknesses of the Sn films were quantitatively analyzed using X-ray fluorescence. As a result, it was found that the threshold ion energy is approximately 7 eV, and that the peak of the Sn atom yield per hydrogen ion, which is the value indicating the efficiency of the reactive ion etching, is obtained at a hydrogen ion energy of approximately 14 eV.

Original languageEnglish
Pages (from-to)1406003-1-1406003-5
JournalPlasma and Fusion Research
Volume16
DOIs
Publication statusPublished - 2021

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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