Effect of ion mass and ion energy on low-temperature deposition of polycrystalline-Si thin film on SiO2 layer by using sputtering-type electron cyclotron resonance plasma

Junli Wang, Taishi Saitou, Youhei Sugimoto, Dong Wang, Liwei Zhao, Hiroshi Nakashima

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Polycrystalline-Si thin film was successfully deposited on a SiO2 layer by using a sputtering-type electron cyclotron resonance plasma at the low substrate temperature of 400°C. The effects of ion (Ar, Kr, and Xe) mass and radius on the crystallization of deposited Si films were studied. Ions having a large mass and radius contributed more effective energy to Si atoms and thus crystallization was enhanced. The effect of substrate DC-bias for control of ion energy was also clarified. DC substrate bias voltage of (-)50 V for the Xe plasma was found to be most suitable for polycrystalline-Si growth.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number5 B
Publication statusPublished - May 15 2003

Fingerprint

Electron cyclotron resonance
electron cyclotron resonance
Sputtering
sputtering
Plasmas
Thin films
Ions
Substrates
thin films
Crystallization
direct current
crystallization
ions
radii
Bias voltage
Temperature
energy
Atoms
electric potential
atoms

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

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abstract = "Polycrystalline-Si thin film was successfully deposited on a SiO2 layer by using a sputtering-type electron cyclotron resonance plasma at the low substrate temperature of 400°C. The effects of ion (Ar, Kr, and Xe) mass and radius on the crystallization of deposited Si films were studied. Ions having a large mass and radius contributed more effective energy to Si atoms and thus crystallization was enhanced. The effect of substrate DC-bias for control of ion energy was also clarified. DC substrate bias voltage of (-)50 V for the Xe plasma was found to be most suitable for polycrystalline-Si growth.",
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T1 - Effect of ion mass and ion energy on low-temperature deposition of polycrystalline-Si thin film on SiO2 layer by using sputtering-type electron cyclotron resonance plasma

AU - Wang, Junli

AU - Saitou, Taishi

AU - Sugimoto, Youhei

AU - Wang, Dong

AU - Zhao, Liwei

AU - Nakashima, Hiroshi

PY - 2003/5/15

Y1 - 2003/5/15

N2 - Polycrystalline-Si thin film was successfully deposited on a SiO2 layer by using a sputtering-type electron cyclotron resonance plasma at the low substrate temperature of 400°C. The effects of ion (Ar, Kr, and Xe) mass and radius on the crystallization of deposited Si films were studied. Ions having a large mass and radius contributed more effective energy to Si atoms and thus crystallization was enhanced. The effect of substrate DC-bias for control of ion energy was also clarified. DC substrate bias voltage of (-)50 V for the Xe plasma was found to be most suitable for polycrystalline-Si growth.

AB - Polycrystalline-Si thin film was successfully deposited on a SiO2 layer by using a sputtering-type electron cyclotron resonance plasma at the low substrate temperature of 400°C. The effects of ion (Ar, Kr, and Xe) mass and radius on the crystallization of deposited Si films were studied. Ions having a large mass and radius contributed more effective energy to Si atoms and thus crystallization was enhanced. The effect of substrate DC-bias for control of ion energy was also clarified. DC substrate bias voltage of (-)50 V for the Xe plasma was found to be most suitable for polycrystalline-Si growth.

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