Polycrystalline-Si thin film was successfully deposited on a SiO2 layer by using a sputtering-type electron cyclotron resonance plasma at the low substrate temperature of 400°C. The effects of ion (Ar, Kr, and Xe) mass and radius on the crystallization of deposited Si films were studied. Ions having a large mass and radius contributed more effective energy to Si atoms and thus crystallization was enhanced. The effect of substrate DC-bias for control of ion energy was also clarified. DC substrate bias voltage of (-)50 V for the Xe plasma was found to be most suitable for polycrystalline-Si growth.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||5 B|
|Publication status||Published - May 15 2003|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)