TY - JOUR
T1 - Effect of ion mass and ion energy on low-temperature deposition of polycrystalline-Si thin film on SiO2 layer by using sputtering-type electron cyclotron resonance plasma
AU - Wang, Junli
AU - Saitou, Taishi
AU - Sugimoto, Youhei
AU - Wang, Dong
AU - Zhao, Liwei
AU - Nakashima, Hiroshi
PY - 2003/5/15
Y1 - 2003/5/15
N2 - Polycrystalline-Si thin film was successfully deposited on a SiO2 layer by using a sputtering-type electron cyclotron resonance plasma at the low substrate temperature of 400°C. The effects of ion (Ar, Kr, and Xe) mass and radius on the crystallization of deposited Si films were studied. Ions having a large mass and radius contributed more effective energy to Si atoms and thus crystallization was enhanced. The effect of substrate DC-bias for control of ion energy was also clarified. DC substrate bias voltage of (-)50 V for the Xe plasma was found to be most suitable for polycrystalline-Si growth.
AB - Polycrystalline-Si thin film was successfully deposited on a SiO2 layer by using a sputtering-type electron cyclotron resonance plasma at the low substrate temperature of 400°C. The effects of ion (Ar, Kr, and Xe) mass and radius on the crystallization of deposited Si films were studied. Ions having a large mass and radius contributed more effective energy to Si atoms and thus crystallization was enhanced. The effect of substrate DC-bias for control of ion energy was also clarified. DC substrate bias voltage of (-)50 V for the Xe plasma was found to be most suitable for polycrystalline-Si growth.
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U2 - 10.1143/jjap.42.l511
DO - 10.1143/jjap.42.l511
M3 - Article
AN - SCOPUS:0038042473
SN - 0021-4922
VL - 42
SP - L511-L513
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 5 B
ER -