Effect of ion mass and ion energy on low-temperature deposition of polycrystalline-Si thin film on SiO2 layer by using sputtering-type electron cyclotron resonance plasma

Junli Wang, Taishi Saitou, Youhei Sugimoto, Dong Wang, Liwei Zhao, Hiroshi Nakashima

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Polycrystalline-Si thin film was successfully deposited on a SiO2 layer by using a sputtering-type electron cyclotron resonance plasma at the low substrate temperature of 400°C. The effects of ion (Ar, Kr, and Xe) mass and radius on the crystallization of deposited Si films were studied. Ions having a large mass and radius contributed more effective energy to Si atoms and thus crystallization was enhanced. The effect of substrate DC-bias for control of ion energy was also clarified. DC substrate bias voltage of (-)50 V for the Xe plasma was found to be most suitable for polycrystalline-Si growth.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number5 B
Publication statusPublished - May 15 2003

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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