TY - JOUR
T1 - Effect of La substitution on electrical properties of highly oriented Bi4Ti3O12 films prepared by metalorganic chemical vapor deposition
AU - Sakai, Tomohiro
AU - Watanabe, Takayuki
AU - Funakubo, Hiroshi
AU - Saito, Keisuke
AU - Osada, Minoru
PY - 2003/1
Y1 - 2003/1
N2 - The effect of La substitution on the electrical properties of Bi4Ti31O12 was investigated by using epitaxially grown Bi4Ti3O12 (BIT) films and highly oriented (Bi3.25La0.75)Ti3O12 [BLT] films with (001)-, (118)- and (104)(014)-orientations. By characterizing the leakage current density for films with different orientations, it was found that the leakage current density along the a-b plane was decreased by La substitution. The spontaneous polarization (Ps) of the BLT film evaluated from the P-E hysteresis properties of the (001)- and (118)-oriented films was 3.5 and 38 μC/cm2 along the c-axis and the a-axis, respectively. They were smaller than those of the BIT films: 4.0 and 50 μC/cm2. Based on the fact that La preferentially substitutes for the Bi site in the pseudoperovskite layer, the large remanent polarization widely reported for polycrystalline (Bi3.25La0.75)Ti3O12 films is related to the reduction of the number of defect complexes in the pseudoperovskite layer that possibly pin the domain motion.
AB - The effect of La substitution on the electrical properties of Bi4Ti31O12 was investigated by using epitaxially grown Bi4Ti3O12 (BIT) films and highly oriented (Bi3.25La0.75)Ti3O12 [BLT] films with (001)-, (118)- and (104)(014)-orientations. By characterizing the leakage current density for films with different orientations, it was found that the leakage current density along the a-b plane was decreased by La substitution. The spontaneous polarization (Ps) of the BLT film evaluated from the P-E hysteresis properties of the (001)- and (118)-oriented films was 3.5 and 38 μC/cm2 along the c-axis and the a-axis, respectively. They were smaller than those of the BIT films: 4.0 and 50 μC/cm2. Based on the fact that La preferentially substitutes for the Bi site in the pseudoperovskite layer, the large remanent polarization widely reported for polycrystalline (Bi3.25La0.75)Ti3O12 films is related to the reduction of the number of defect complexes in the pseudoperovskite layer that possibly pin the domain motion.
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U2 - 10.1143/JJAP.42.166
DO - 10.1143/JJAP.42.166
M3 - Article
AN - SCOPUS:0038343591
SN - 0021-4922
VL - 42
SP - 166
EP - 169
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 1
ER -