Effect of laser annealing on photoluminescence properties of Phosphorus implanted ZnO nanorods

Tetsuya Shimogaki; Kota Okazaki; Daisuke Nakamura; Mitsuhiro Higashihata; Tanemasa Asano; Tatsuo Okada

doi:10.1364/OE.20.015247

Effect of laser annealing on photoluminescence properties of Phosphorus implanted ZnO nanorods

Tetsuya Shimogaki, Kota Okazaki, Daisuke Nakamura, Mitsuhiro Higashihata, Tanemasa Asano, Tatsuo Okada

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The effect of the nanosecond laser annealing on the photoluminescence (PL) property of phosphorus ions (P+) implanted ZnOnanorods (NRs) has been investigated. The nanosecond laser annealing was performed with the third harmonic of a Q-switched Nd:YAG laser (355nm, 10ns/pulse) at a fluence of 100mJ/cm2. It turned out that nanosecond laser annealing is more effective in the recovery of the PL property compared with the thermal annealing using an electric furnace. As the results, the I-V characteristics of the p-n homojunctions along ZnO NRs showed rectifying property with a threshold voltage of approximately 6V.

Original language	English
Pages (from-to)	15247-15252
Number of pages	6
Journal	Optics Express
Volume	20
Issue number	14
DOIs	https://doi.org/10.1364/OE.20.015247
Publication status	Published - Jul 2 2012

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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abstract = "The effect of the nanosecond laser annealing on the photoluminescence (PL) property of phosphorus ions (P+) implanted ZnOnanorods (NRs) has been investigated. The nanosecond laser annealing was performed with the third harmonic of a Q-switched Nd:YAG laser (355nm, 10ns/pulse) at a fluence of 100mJ/cm2. It turned out that nanosecond laser annealing is more effective in the recovery of the PL property compared with the thermal annealing using an electric furnace. As the results, the I-V characteristics of the p-n homojunctions along ZnO NRs showed rectifying property with a threshold voltage of approximately 6V.",

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T1 - Effect of laser annealing on photoluminescence properties of Phosphorus implanted ZnO nanorods

AU - Shimogaki, Tetsuya

AU - Okazaki, Kota

AU - Nakamura, Daisuke

AU - Higashihata, Mitsuhiro

AU - Asano, Tanemasa

AU - Okada, Tatsuo

PY - 2012/7/2

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AB - The effect of the nanosecond laser annealing on the photoluminescence (PL) property of phosphorus ions (P+) implanted ZnOnanorods (NRs) has been investigated. The nanosecond laser annealing was performed with the third harmonic of a Q-switched Nd:YAG laser (355nm, 10ns/pulse) at a fluence of 100mJ/cm2. It turned out that nanosecond laser annealing is more effective in the recovery of the PL property compared with the thermal annealing using an electric furnace. As the results, the I-V characteristics of the p-n homojunctions along ZnO NRs showed rectifying property with a threshold voltage of approximately 6V.

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Effect of laser annealing on photoluminescence properties of Phosphorus implanted ZnO nanorods

Abstract

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