Effect of laser annealing on photoluminescence properties of Phosphorus implanted ZnO nanorods

Tetsuya Shimogaki, Kota Okazaki, Daisuke Nakamura, Mitsuhiro Higashihata, Tanemasa Asano, Tatsuo Okada

Research output: Contribution to journalArticle

15 Citations (Scopus)


The effect of the nanosecond laser annealing on the photoluminescence (PL) property of phosphorus ions (P+) implanted ZnOnanorods (NRs) has been investigated. The nanosecond laser annealing was performed with the third harmonic of a Q-switched Nd:YAG laser (355nm, 10ns/pulse) at a fluence of 100mJ/cm2. It turned out that nanosecond laser annealing is more effective in the recovery of the PL property compared with the thermal annealing using an electric furnace. As the results, the I-V characteristics of the p-n homojunctions along ZnO NRs showed rectifying property with a threshold voltage of approximately 6V.

Original languageEnglish
Pages (from-to)15247-15252
Number of pages6
JournalOptics Express
Issue number14
Publication statusPublished - Jul 2 2012


All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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