Effect of low frequency magnetic field on SiC solution growth

Frédéric Mercier, Shin Ichi Nishizawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated numerically fluid dynamics and carbon transport in a 2 inches SiC solution growth with the presence of alternative magnetic fields. Buoyancy and Marangoni convection are taken into account. Our numerical results revealed that the magnetic field parameters have a strong impact on the melt convection. We also propose a solution to increase the mass transfer at the crystal growth front.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2010
Pages32-35
Number of pages4
DOIs
Publication statusPublished - Apr 28 2011
Externally publishedYes
Event8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010 - Oslo, Norway
Duration: Aug 29 2010Sep 2 2010

Publication series

NameMaterials Science Forum
Volume679-680
ISSN (Print)0255-5476

Other

Other8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010
CountryNorway
CityOslo
Period8/29/109/2/10

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Mercier, F., & Nishizawa, S. I. (2011). Effect of low frequency magnetic field on SiC solution growth. In Silicon Carbide and Related Materials 2010 (pp. 32-35). (Materials Science Forum; Vol. 679-680). https://doi.org/10.4028/www.scientific.net/MSF.679-680.32