Effect of low frequency magnetic field on SiC solution growth

Frédéric Mercier, Shin Ichi Nishizawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated numerically fluid dynamics and carbon transport in a 2 inches SiC solution growth with the presence of alternative magnetic fields. Buoyancy and Marangoni convection are taken into account. Our numerical results revealed that the magnetic field parameters have a strong impact on the melt convection. We also propose a solution to increase the mass transfer at the crystal growth front.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2010
Pages32-35
Number of pages4
DOIs
Publication statusPublished - Apr 28 2011
Externally publishedYes
Event8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010 - Oslo, Norway
Duration: Aug 29 2010Sep 2 2010

Publication series

NameMaterials Science Forum
Volume679-680
ISSN (Print)0255-5476

Other

Other8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010
CountryNorway
CityOslo
Period8/29/109/2/10

Fingerprint

convection
Magnetic fields
low frequencies
Marangoni convection
fluid dynamics
Crystallization
Fluid dynamics
Buoyancy
Crystal growth
magnetic fields
buoyancy
mass transfer
crystal growth
Carbon
Mass transfer
carbon
Convection

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Mercier, F., & Nishizawa, S. I. (2011). Effect of low frequency magnetic field on SiC solution growth. In Silicon Carbide and Related Materials 2010 (pp. 32-35). (Materials Science Forum; Vol. 679-680). https://doi.org/10.4028/www.scientific.net/MSF.679-680.32

Effect of low frequency magnetic field on SiC solution growth. / Mercier, Frédéric; Nishizawa, Shin Ichi.

Silicon Carbide and Related Materials 2010. 2011. p. 32-35 (Materials Science Forum; Vol. 679-680).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mercier, F & Nishizawa, SI 2011, Effect of low frequency magnetic field on SiC solution growth. in Silicon Carbide and Related Materials 2010. Materials Science Forum, vol. 679-680, pp. 32-35, 8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010, Oslo, Norway, 8/29/10. https://doi.org/10.4028/www.scientific.net/MSF.679-680.32
Mercier F, Nishizawa SI. Effect of low frequency magnetic field on SiC solution growth. In Silicon Carbide and Related Materials 2010. 2011. p. 32-35. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.679-680.32
Mercier, Frédéric ; Nishizawa, Shin Ichi. / Effect of low frequency magnetic field on SiC solution growth. Silicon Carbide and Related Materials 2010. 2011. pp. 32-35 (Materials Science Forum).
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