Effect of Low Temperature Annealing on pn Junction Formation using Si Paste

Huan Zhu, Yusuke Kuboki, Morihiro Sakamoto, Yoshimine Kato

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low temperature aluminum-induced crystallization (AIC) was successfully introduced to make a Si paste pn junction device. The Si paste was fabricated by using a planetary ball miller from Si source materials. Oxidation of Si paste was suppressed by low temperature AIC at 400°C. The ideality factor of 4.3 with a rectification ratio of 3200 was obtained. Si paste can be a novel technology candidate to lower the cost of Si devices such as solar cells.

Original languageEnglish
Title of host publication2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728181769
DOIs
Publication statusPublished - Apr 8 2021
Event5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 - Chengdu, China
Duration: Apr 8 2021Apr 11 2021

Publication series

Name2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

Conference

Conference5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Country/TerritoryChina
CityChengdu
Period4/8/214/11/21

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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