TY - JOUR
T1 - Effect of Mn-Based Slurries on Chemical Mechanical Polishing of SiC Substrates
AU - Zhao, Panpan
AU - Yin, Tao
AU - Doi, Toshiro
AU - Kurokawa, Syuhei
AU - Seshimo, Kiyoshi
AU - Ye, Dongfen
AU - Cai, Jianchen
N1 - Funding Information:
This study was funded by National Natural Science Foundation of China(51275272), Basic Public Welfare Research Projects of Zhejiang Province(LGG18E050013), Basic Public Welfare Research Projects of Zhejiang Province(LGG19F020005) and Talent Development Projects of Quzhou University (003216017).
Publisher Copyright:
© 2022 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.
PY - 2022/7
Y1 - 2022/7
N2 - High-efficiency and high-quality chemical mechanical polishing (CMP) of silicon carbide (SiC) substrates was achieved using slurries prepared with manganese oxide (MnO2, Mn2O3) particles. Experimental results showed that the oxidation-reduction potential (ORP) and zeta potential of these manganese (Mn)-based slurries decreased with increasing pH. For alkaline pH values (> 7), MnO2 particles were converted into strongly oxidizing MnO42- ions that promoted interfacial chemical reactions during CMP, thereby increasing the material removal rate. Observation and analysis of the SiC substrate surface showed that the surface roughness (Ra) reached 1 nm after polishing, but slight surface scratches remained. The binding energy of elemental oxygen (O) and Mn (O1s and Mn2p) indicated that the atoms on the substrate surface underwent an oxidation reaction, which weakened the Si-C molecular bond and thus increased the material removal rate.
AB - High-efficiency and high-quality chemical mechanical polishing (CMP) of silicon carbide (SiC) substrates was achieved using slurries prepared with manganese oxide (MnO2, Mn2O3) particles. Experimental results showed that the oxidation-reduction potential (ORP) and zeta potential of these manganese (Mn)-based slurries decreased with increasing pH. For alkaline pH values (> 7), MnO2 particles were converted into strongly oxidizing MnO42- ions that promoted interfacial chemical reactions during CMP, thereby increasing the material removal rate. Observation and analysis of the SiC substrate surface showed that the surface roughness (Ra) reached 1 nm after polishing, but slight surface scratches remained. The binding energy of elemental oxygen (O) and Mn (O1s and Mn2p) indicated that the atoms on the substrate surface underwent an oxidation reaction, which weakened the Si-C molecular bond and thus increased the material removal rate.
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U2 - 10.1149/2162-8777/ac7bef
DO - 10.1149/2162-8777/ac7bef
M3 - Article
AN - SCOPUS:85134169418
VL - 11
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 7
M1 - 074002
ER -